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10 A/567 V normally off p-GaN gate HEMT with high-threshold voltage and low-gate leakage current 期刊论文
ELECTRONICS LETTERS, 2018
作者:  Wang, Qilong;  Zhang, Bingliang;  Du, Zhongkai;  Zhao, Jie(赵杰);  Chen, Fu(陈扶)
收藏  |  浏览/下载：87/0  |  提交时间：2019/03/27
An Al0.25Ga0.75N/GaN Lateral Field Emission Device with a Nano Void Channel 期刊论文
CHINESE PHYSICS LETTERS, 2018
作者:  Yu, Guo-Hao(于国浩);  Cai, Yong(蔡勇);  Zhang, Bao-Shun(张宝顺);  Wang, Yi-Qun(王逸群);  Fu, Kai(付凯)
收藏  |  浏览/下载：49/0  |  提交时间：2019/03/27
Influence factors and temperature reliability of ohmic contact on AlGaN/GaN HEMTs 期刊论文
AIP ADVANCES, 2018
作者:  Fan, Yaming(范亚明);  Song, Liang(宋亮);  Cai, Yong(蔡勇);  Zhang, Baoshun(张宝顺);  Zhao, Jie
收藏  |  浏览/下载：65/0  |  提交时间：2019/03/27
Degradation of AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors under off-state electrical stress 期刊论文
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2018
作者:  Zhang, Baoshun(张宝顺);  Fan, Yaming(范亚明);  Hao, Ronghui(郝荣晖);  Yu, Guohao(于国浩);  Zhao, Jie
收藏  |  浏览/下载：44/0  |  提交时间：2019/03/27
Studies on Fabrication and Reliability of GaN High-Resistivity-Cap-Layer HEMT 期刊论文
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2018
作者:  Deng, Xuguang(邓旭光);  Li, Xiang;  Xu, Ning;  Hao, Ronghui(郝荣晖);  Zhang, Xinping
收藏  |  浏览/下载：48/0  |  提交时间：2019/03/27
Nonpolar vertical GaN-on-GaN p-n diodes grown on free-standing (10(1)over-bar0) m-plane GaN 期刊论文
APPLIED PHYSICS EXPRESS, 2018
作者:  Fu, Houqiang;  Yang, Tsung-Han;  Xu, Ke(徐科);  Ponce, Fernando A.;  Zhang, Baoshun(张宝顺)
收藏  |  浏览/下载：33/0  |  提交时间：2019/03/27
Solar-blind ultraviolet photodetector based on graphene/vertical Ga2O3 nanowire array heterojunction 期刊论文
NANOPHOTONICS, 2018
作者:  Zhang, Baoshun(张宝顺);  Zhang, Xiaodong(张晓东);  Zhao, Yukun;  Fu, Kai(付凯);  Sun, Chi
收藏  |  浏览/下载：49/0  |  提交时间：2019/03/27
Flexible Broadband Graphene Photodetectors Enhanced by Plasmonic Cu3-xP Colloidal Nanocrystals 期刊论文
SMALL, 2017
作者:  Sun, Tian;  Wang, Yongjie;  Yu, Wenzhi;  Wang, Yusheng;  Dai, Zhigao
收藏  |  浏览/下载：48/0  |  提交时间：2018/02/05
Interface Si donor control to improve dynamic performance of AlGaN/GaN MIS-HEMTs 期刊论文
AIP ADVANCES, 2017
作者:  Song, L;  Fu, K（付凯）;  Zhang, ZL（张志利）;  Sun, SC;  Li, WY
收藏  |  浏览/下载：25/0  |  提交时间：2018/02/05
Breakdown Enhancement and Current Collapse Suppression by High-Resistivity GaN Cap Layer in Normally-Off AlGaN/GaN HEMTs 期刊论文
IEEE ELECTRON DEVICE LETTERS, 2017
作者:  Hao, Ronghui;  Li, Weiyi;  Fu, Kai（付凯）;  Yu, Guohao;  Song, Liang
收藏  |  浏览/下载：48/0  |  提交时间：2018/02/05

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