Breakdown Enhancement and Current Collapse Suppression by High-Resistivity GaN Cap Layer in Normally-Off AlGaN/GaN HEMTs

	Breakdown Enhancement and Current Collapse Suppression by High-Resistivity GaN Cap Layer in Normally-Off AlGaN/GaN HEMTs
	Hao, Ronghui; Li, Weiyi; Fu, Kai（付凯）; Yu, Guohao; Song, Liang; Yuan, Jie; Li, Junshuai; Deng, Xuguang; Zhang, Xiaodong; Zhou, Qi
刊名	IEEE ELECTRON DEVICE LETTERS
	2017
语种	英语
内容类型	期刊论文
源URL	[http://ir.sinano.ac.cn/handle/332007/5314]
专题	苏州纳米技术与纳米仿生研究所_纳米加工公共平台
推荐引用方式 GB/T 7714	Hao, Ronghui,Li, Weiyi,Fu, Kai,et al. Breakdown Enhancement and Current Collapse Suppression by High-Resistivity GaN Cap Layer in Normally-Off AlGaN/GaN HEMTs[J]. IEEE ELECTRON DEVICE LETTERS,2017.
APA	Hao, Ronghui.,Li, Weiyi.,Fu, Kai.,Yu, Guohao.,Song, Liang.,...&Zhang, Baoshun.(2017).Breakdown Enhancement and Current Collapse Suppression by High-Resistivity GaN Cap Layer in Normally-Off AlGaN/GaN HEMTs.IEEE ELECTRON DEVICE LETTERS.
MLA	Hao, Ronghui,et al."Breakdown Enhancement and Current Collapse Suppression by High-Resistivity GaN Cap Layer in Normally-Off AlGaN/GaN HEMTs".IEEE ELECTRON DEVICE LETTERS (2017).