10 A/567 V normally off p-GaN gate HEMT with high-threshold voltage and low-gate leakage current

	10 A/567 V normally off p-GaN gate HEMT with high-threshold voltage and low-gate leakage current
	Wang, Qilong; Zhang, Bingliang; Du, Zhongkai; Zhao, Jie(赵杰); Chen, Fu(陈扶); Song, Liang(宋亮); Fu, Kai(付凯); Wu, Dongdong(吴冬东); Hao, Ronghui(郝荣晖); Zhang, Baoshun(张宝顺)
刊名	ELECTRONICS LETTERS
	2018
其他题名	10 A/567 V normally off p-GaN gate HEMT with high-threshold voltage and low-gate leakage current
语种	英语
内容类型	期刊论文
源URL	[http://ir.sinano.ac.cn/handle/332007/6238]
专题	苏州纳米技术与纳米仿生研究所_纳米加工公共平台
作者单位	中国科学院苏州纳米技术与纳米仿生研究所
推荐引用方式 GB/T 7714	Wang, Qilong,Zhang, Bingliang,Du, Zhongkai,et al. 10 A/567 V normally off p-GaN gate HEMT with high-threshold voltage and low-gate leakage current[J]. ELECTRONICS LETTERS,2018.
APA	Wang, Qilong.,Zhang, Bingliang.,Du, Zhongkai.,Zhao, Jie.,Chen, Fu.,...&Yu, Guohao.(2018).10 A/567 V normally off p-GaN gate HEMT with high-threshold voltage and low-gate leakage current.ELECTRONICS LETTERS.
MLA	Wang, Qilong,et al."10 A/567 V normally off p-GaN gate HEMT with high-threshold voltage and low-gate leakage current".ELECTRONICS LETTERS (2018).