Degradation of AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors under off-state electrical stress

	Degradation of AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors under off-state electrical stress
	Zhang, Baoshun(张宝顺); Fan, Yaming(范亚明); Hao, Ronghui(郝荣晖); Yu, Guohao(于国浩); Zhao, Jie; Song, Liang(宋亮); Fu, Kai(付凯); Cai, Yong(蔡勇)
刊名	JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
	2018
其他题名	Degradation of AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors under off-state electrical stress
语种	英语
内容类型	期刊论文
源URL	[http://ir.sinano.ac.cn/handle/332007/6223]
专题	苏州纳米技术与纳米仿生研究所_纳米加工公共平台
作者单位	中国科学院苏州纳米技术与纳米仿生研究所
推荐引用方式 GB/T 7714	Zhang, Baoshun,Fan, Yaming,Hao, Ronghui,et al. Degradation of AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors under off-state electrical stress[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,2018.
APA	Zhang, Baoshun.,Fan, Yaming.,Hao, Ronghui.,Yu, Guohao.,Zhao, Jie.,...&Cai, Yong.(2018).Degradation of AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors under off-state electrical stress.JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B.
MLA	Zhang, Baoshun,et al."Degradation of AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors under off-state electrical stress".JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B (2018).