CORC

在结果中检索

CORC

浏览/检索结果: 共63条，第1-10条 帮助

限定条件                
已选(0)清除 条数/页：   排序方式：
Realization of 366 nm GaN/AlGaN single quantum well ultraviolet laser diodes with a reduction of carrier loss in the waveguide layers 期刊论文
JOURNAL OF APPLIED PHYSICS, 2021, 卷号: 130, 期号: 17, 页码: 173105
作者:  Yang, J.;   Wang, B. B.;   Zhao, D. G.;   Liu, Z. S.;   Liang, F.;   Chen, P.;   Zhang, Y. H.;   Zhang, Z. Z.
收藏  |  浏览/下载：8/0  |  提交时间：2022/03/24
The self-compensation effect of heavily Mg doped p-GaN films studied by SIMS and photoluminescence 期刊论文
Superlattices and Microstructures, 2019, 卷号: 133, 页码: 106177
作者:  H.R. Qi ;   S. Zhang ;   S.T. Liu ;   F. Liang ;   L.K. Yi ;   J.L. Huang ;   M. Zhou ;   Z.W. He ;   D.G. Zhao ;   D.S. Jiang
收藏  |  浏览/下载：7/0  |  提交时间：2020/07/31
Probing the semiconductor to semimetal transition in InAs/GaSb double quantum wells by magneto-infrared spectroscopy 期刊论文
PHYSICAL REVIEW B, 2017, 卷号: 95, 期号: 4, 页码: 045116
作者:  Y. Jiang;  S. Thapa;  G. D. Sanders;  C. J. Stanton;  Q. Zhang
收藏  |  浏览/下载：40/0  |  提交时间：2018/06/01
Investigation on the corrosive effect of NH3 during InGaN/GaN multi-quantum well growth in light emitting diodes 期刊论文
Scientific Reports, 2017, 卷号: 7, 页码: 44850
作者:  J. Yang;  D. G. Zhao;  D. S. Jiang;  P. Chen;  J. J. Zhu
收藏  |  浏览/下载：23/0  |  提交时间：2018/11/30
Performance of InGaN based green laser diodes improved by using an asymmetric InGaN/InGaN multi-quantum well active region 期刊论文
OPTICS EXPRESS, 2017, 卷号: 25, 期号: 9, 页码: 9595-9602
作者:  J. YANG;  D. G. ZHAO;  D. S. JIANG;  X. LI;  F. LIANG
收藏  |  浏览/下载：23/0  |  提交时间：2018/11/30
Bias Dependence of the Electrical Spin Injection into GaAs from Co-Fe-B=MgO Injectors with Different MgO Growth Processes 期刊论文
PHYSICAL REVIEW APPLIED, 2017, 卷号: 8, 页码: 054027
作者:  P. Barate;  S. H. Liang;  T. T. Zhang;  J. Frougier;  B. Xu
收藏  |  浏览/下载：21/0  |  提交时间：2018/05/30
A Facile Method for Heteroepitaxial Growth of Homogeneous 3C-SiC Thin Films on Both Surfaces of Suspended SiWafer by Conventional Chemical Vapor Deposition 期刊论文
ECS Journal of Solid State Science and Technology, 2017, 卷号: 6, 期号: 1, 页码: 27-31
作者:  X. F. Liu;  z G. G. Yan;  Z. W. Shen;  Z. X.Wen;  L. X. Tian
收藏  |  浏览/下载：32/0  |  提交时间：2018/06/15
Evolution of differential efficiency in blue InGaN laser diodes before and after a lasing threshold 期刊论文
Applied Optics, 2017, 卷号: 56, 期号: 9, 页码: 2462-2466
作者:  X. LI;  Z. S. LIU;  D. G. ZHAO;  D. S. JIANG;  P. CHEN
收藏  |  浏览/下载：20/0  |  提交时间：2018/07/11
Electroluminescence property improvement by adjusting quantum wells’ position relative to p-doped region in InGaN/GaN multiple-quantum-well light emitting diodes 期刊论文
AIP Advances, 2017, 卷号: 7, 页码: 035103
作者:  P. Chen;  D. G. Zhao;  D. S. Jiang;  H. Long;  M. Li
收藏  |  浏览/下载：25/0  |  提交时间：2018/07/11
XPS study of impurities in Si-doped AlN film 期刊论文
surface and interface analysis, 2016, 卷号: 48, 期号: 12, 页码: 1305–1309
F. Liang; P. Chen; D. G. Zhao; D. S. Jiang; Z. J. Zhao; Z. S. Liu; J. J. Zhu; J. Yang; L. C. Le; W. Liu; X.G. He; X. J. Li; X Li; S. T Liu; H. Yang; J. P. Liu; L. Q. Zhang; Y. T. Zhang; G. T. Du
收藏  |  浏览/下载：28/0  |  提交时间：2017/03/10

©版权所有 ©2017 CSpace - Powered by CSpace