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Probing the semiconductor to semimetal transition in InAs/GaSb double quantum wells by magneto-infrared spectroscopy 期刊论文
PHYSICAL REVIEW B, 2017, 卷号: 95, 期号: 4, 页码: 045116
作者:  Y. Jiang;  S. Thapa;  G. D. Sanders;  C. J. Stanton;  Q. Zhang
收藏  |  浏览/下载:40/0  |  提交时间:2018/06/01
Investigation on the corrosive effect of NH3 during InGaN/GaN multi-quantum well growth in light emitting diodes 期刊论文
Scientific Reports, 2017, 卷号: 7, 页码: 44850
作者:  J. Yang;  D. G. Zhao;  D. S. Jiang;  P. Chen;  J. J. Zhu
收藏  |  浏览/下载:23/0  |  提交时间:2018/11/30
Performance of InGaN based green laser diodes improved by using an asymmetric InGaN/InGaN multi-quantum well active region 期刊论文
OPTICS EXPRESS, 2017, 卷号: 25, 期号: 9, 页码: 9595-9602
作者:  J. YANG;  D. G. ZHAO;  D. S. JIANG;  X. LI;  F. LIANG
收藏  |  浏览/下载:23/0  |  提交时间:2018/11/30
Bias Dependence of the Electrical Spin Injection into GaAs from Co-Fe-B=MgO Injectors with Different MgO Growth Processes 期刊论文
PHYSICAL REVIEW APPLIED, 2017, 卷号: 8, 页码: 054027
作者:  P. Barate;  S. H. Liang;  T. T. Zhang;  J. Frougier;  B. Xu
收藏  |  浏览/下载:21/0  |  提交时间:2018/05/30
A Facile Method for Heteroepitaxial Growth of Homogeneous 3C-SiC Thin Films on Both Surfaces of Suspended SiWafer by Conventional Chemical Vapor Deposition 期刊论文
ECS Journal of Solid State Science and Technology, 2017, 卷号: 6, 期号: 1, 页码: 27-31
作者:  X. F. Liu;  z G. G. Yan;  Z. W. Shen;  Z. X.Wen;  L. X. Tian
收藏  |  浏览/下载:32/0  |  提交时间:2018/06/15
Evolution of differential efficiency in blue InGaN laser diodes before and after a lasing threshold 期刊论文
Applied Optics, 2017, 卷号: 56, 期号: 9, 页码: 2462-2466
作者:  X. LI;  Z. S. LIU;  D. G. ZHAO;  D. S. JIANG;  P. CHEN
收藏  |  浏览/下载:20/0  |  提交时间:2018/07/11
Electroluminescence property improvement by adjusting quantum wells’ position relative to p-doped region in InGaN/GaN multiple-quantum-well light emitting diodes 期刊论文
AIP Advances, 2017, 卷号: 7, 页码: 035103
作者:  P. Chen;  D. G. Zhao;  D. S. Jiang;  H. Long;  M. Li
收藏  |  浏览/下载:25/0  |  提交时间:2018/07/11


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