Performance of InGaN based green laser diodes improved by using an asymmetric InGaN/InGaN multi-quantum well active region | |
J. YANG; D. G. ZHAO; D. S. JIANG; X. LI; F. LIANG; P. CHEN; J. J. ZHU; Z. S. LIU; S. T. LIU; L. Q. ZHANG | |
刊名 | OPTICS EXPRESS |
2017 | |
卷号 | 25期号:9页码:9595-9602 |
学科主题 | 光电子学 |
公开日期 | 2018-11-30 |
内容类型 | 期刊论文 |
源URL | [http://ir.semi.ac.cn/handle/172111/28786] |
专题 | 半导体研究所_光电子研究发展中心 |
推荐引用方式 GB/T 7714 | J. YANG,D. G. ZHAO,D. S. JIANG,et al. Performance of InGaN based green laser diodes improved by using an asymmetric InGaN/InGaN multi-quantum well active region[J]. OPTICS EXPRESS,2017,25(9):9595-9602. |
APA | J. YANG.,D. G. ZHAO.,D. S. JIANG.,X. LI.,F. LIANG.,...&M. LI.(2017).Performance of InGaN based green laser diodes improved by using an asymmetric InGaN/InGaN multi-quantum well active region.OPTICS EXPRESS,25(9),9595-9602. |
MLA | J. YANG,et al."Performance of InGaN based green laser diodes improved by using an asymmetric InGaN/InGaN multi-quantum well active region".OPTICS EXPRESS 25.9(2017):9595-9602. |
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