A Facile Method for Heteroepitaxial Growth of Homogeneous 3C-SiC Thin Films on Both Surfaces of Suspended SiWafer by Conventional Chemical Vapor Deposition | |
X. F. Liu; z G. G. Yan; Z. W. Shen; Z. X.Wen; L. X. Tian; W. S. Zhao; L. Wang; M. Guan; F. Zhang; G. S. Sun | |
刊名 | ECS Journal of Solid State Science and Technology |
2017 | |
卷号 | 6期号:1页码:27-31 |
学科主题 | 半导体材料 |
公开日期 | 2018-06-15 |
内容类型 | 期刊论文 |
源URL | [http://ir.semi.ac.cn/handle/172111/28600] |
专题 | 半导体研究所_中科院半导体材料科学重点实验室 |
推荐引用方式 GB/T 7714 | X. F. Liu,z G. G. Yan,Z. W. Shen,et al. A Facile Method for Heteroepitaxial Growth of Homogeneous 3C-SiC Thin Films on Both Surfaces of Suspended SiWafer by Conventional Chemical Vapor Deposition[J]. ECS Journal of Solid State Science and Technology,2017,6(1):27-31. |
APA | X. F. Liu.,z G. G. Yan.,Z. W. Shen.,Z. X.Wen.,L. X. Tian.,...&Y. P. Zeng.(2017).A Facile Method for Heteroepitaxial Growth of Homogeneous 3C-SiC Thin Films on Both Surfaces of Suspended SiWafer by Conventional Chemical Vapor Deposition.ECS Journal of Solid State Science and Technology,6(1),27-31. |
MLA | X. F. Liu,et al."A Facile Method for Heteroepitaxial Growth of Homogeneous 3C-SiC Thin Films on Both Surfaces of Suspended SiWafer by Conventional Chemical Vapor Deposition".ECS Journal of Solid State Science and Technology 6.1(2017):27-31. |
个性服务 |
查看访问统计 |
相关权益政策 |
暂无数据 |
收藏/分享 |
除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。
修改评论