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Thermally induced Fe atom transition from substitutional to interstitial sites in InP and its influence on material property 期刊论文
acta physica sinica, 2007, 卷号: 56, 期号: 9, 页码: 5536-5541
Zhao, YW (Zhao You-Wen); Miao, SS (Miao Shan-Shan); Dong, ZY (Dong Zhi-Yuan); Lue, XH (Lue Xiao-Hong); Deng, AH (Deng Ai-Hong); Yang, J (Yang Jun); Wang, B (Wang Bo)
收藏  |  浏览/下载：34/0  |  提交时间：2010/03/29
Improvement of the electrical property of semi-insulating InP by suppression of compensation defects 会议论文
17th international conference on indium phosphide and related materials, glasgow, scotland, may 08-12, 2005
Zhao, YW; Dong, ZY
收藏  |  浏览/下载：220/68  |  提交时间：2010/03/29
Photovoltaic effect in a photon storage cell 期刊论文
journal of infrared and millimeter waves, 2004, 卷号: 23, 期号: 3, 页码: 205-207
Bian SB; Li GR; Yan T; Bing H; Li YX; Yang FH; Zheng HZ
收藏  |  浏览/下载：255/23  |  提交时间：2010/03/09
Effects of annealing ambient on the formation of compensation defects in InP 期刊论文
journal of applied physics, 2003, 卷号: 93, 期号: 2, 页码: 930-932
Deng AH; Mascher P; Zhao YW; Lin LY
收藏  |  浏览/下载：29/0  |  提交时间：2010/08/12
Thermal annealing behaviour of Ni/Au on n-GaN Schottky contacts 期刊论文
journal of physics d-applied physics, 2002, 卷号: 35, 期号: 20, 页码: 2648-2651
作者:  Zhang SM;  Zhao DG
收藏  |  浏览/下载：59/0  |  提交时间：2010/08/12
Fe-diffusion-induced defects in InP annealed in iron phosphide ambient 期刊论文
japanese journal of applied physics part 1-regular papers short notes & review papers, 2002, 卷号: 41, 期号: 4a, 页码: 1929-1931
Zhao YW; Dong HW; Jiao JH; Zhao JQ; Lin LY
收藏  |  浏览/下载：96/7  |  提交时间：2010/08/12
Deep levels in semi-insulating InP obtained by annealing under iron phosphide ambiance 期刊论文
journal of applied physics, 2002, 卷号: 92, 期号: 4, 页码: 1968-1970
Dong HW; Zhao YW; Zhang YH; Jiao JH; Zhao JQ; Lin LY
收藏  |  浏览/下载：63/15  |  提交时间：2010/08/12
Annealing-induced evolution of defects in low-temperature-grown GaAs-related materials 期刊论文
physical review b, 2001, 卷号: 63, 期号: 11, 页码: art.no.115324
Zhang MH; Guo LW; Li HW; Li W; Huang Q; Bao CL; Zhou JM; Liu BL; Xu ZY; Zhang YH; Lu LW
收藏  |  浏览/下载：96/7  |  提交时间：2010/08/12
Studies of high DC current induced degradation in III-V nitride based heterojunctions 期刊论文
ieee transactions on electron devices, 2000, 卷号: 47, 期号: 7, 页码: 1421-1425
Ho WY; Surya C; Tong KY; Lu LW; Ge WK
收藏  |  浏览/下载：38/0  |  提交时间：2010/08/12
Ultrafast low-temperature grown AlGaAs/GaAs photorefractive quantum wells using point defects as capture centers 期刊论文
applied physics letters, 1999, 卷号: 75, 期号: 10, 页码: 1366-1368
Zhang MH; Huang Q; Zhang YF; Zhou JM; Li Q; Xu ZY
收藏  |  浏览/下载：51/0  |  提交时间：2010/08/12

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