Photovoltaic effect in a photon storage cell

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	Photovoltaic effect in a photon storage cell
	Bian SB ; Li GR ; Yan T ; Bing H ; Li YX ; Yang FH ; Zheng HZ
刊名	journal of infrared and millimeter waves
	2004
卷号	23 期号:3 页码:205-207
关键词	photonic storage
ISSN号	1001-9014
通讯作者	bian, sb, chinese acad sci, inst semicond, state key lab superlattices & microstruct, beijing 100083, peoples r china.
中文摘要	the response of photonic memory effect in i-v characteristics of a specially designed photonic memory cell was reported. when the cell is biased in a storage mode, the optical excitation with the photon's energy larger than the energy gap gives rise to a step-like jump in the current. a set-up was used to measure the transient photocurrent at the biases where the step-like jump showed up. it is proved that the falling transient edge of the photocurrent, as the photoexcitation turns off, mainly maps the decaying of electrons and holes, which were previously stored in the cell during the illumination. its time constant is a measure of photonic memory time.
学科主题	半导体物理
收录类别	SCI
语种	英语
公开日期	2010-03-09
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/8040]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Bian SB,Li GR,Yan T,et al. Photovoltaic effect in a photon storage cell[J]. journal of infrared and millimeter waves,2004,23(3):205-207.
APA	Bian SB.,Li GR.,Yan T.,Bing H.,Li YX.,...&Zheng HZ.(2004).Photovoltaic effect in a photon storage cell.journal of infrared and millimeter waves,23(3),205-207.
MLA	Bian SB,et al."Photovoltaic effect in a photon storage cell".journal of infrared and millimeter waves 23.3(2004):205-207.