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科研机构
半导体研究所 [12]
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期刊论文 [10]
会议论文 [2]
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2011 [1]
2010 [1]
2009 [1]
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半导体材料 [12]
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The effects of substrate temperature on the properties of diphasic nanocrystalline silicon thin films
期刊论文
optoelectronics and advanced materials-rapid communications, 2011, 卷号: 5, 期号: 40545, 页码: 112-115
Hao HY
;
Xing J
;
Li WM
;
Zeng XB
;
Kong GL
;
Liao XB
收藏
  |  
浏览/下载:81/3
  |  
提交时间:2011/07/06
Nanocrystalline silicon thin films
Structure
Photoelectrical properties
Stability
MICROCRYSTALLINE SILICON
TRANSITION FILMS
SOLAR-CELLS
HYDROGEN
Delay of the excited state lasing of 1310 nm InAs/GaAs quantum dot lasers by facet coating
期刊论文
applied physics letters, 2010, 卷号: 96, 期号: 17, 页码: art. no. 171101
Cao YL (Cao Yu-Lian)
;
Yang T (Yang Tao)
;
Xu PF (Xu Peng-Fei)
;
Ji HM (Ji Hai-Ming)
;
Gu YX (Gu Yong-Xian)
;
Wang XD (Wang Xiao-Dong)
;
Wang Q (Wang Qing)
;
Ma WQ (Ma Wen-Quan)
;
Chen LH (Chen Liang-Hui)
收藏
  |  
浏览/下载:220/51
  |  
提交时间:2010/05/24
excited states
gallium arsenide
III-V semiconductors
indium compounds
laser tuning
optical films
quantum dot lasers
silicon compounds
tantalum compounds
TEMPERATURE-DEPENDENCE
THRESHOLD
PERFORMANCE
GAIN
An internally-matched GaN HEMTs device with 45.2 W at 8 GHz for X-band application
期刊论文
solid-state electronics, 2009, 卷号: 53, 期号: 3, 页码: 332-335
作者:
Zhang ML
;
Hou QF
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  |  
浏览/下载:129/30
  |  
提交时间:2010/03/08
AlGaN/AlN/GaN
HEMT
MOCVD
SiC substrate
Power device
AlGaN/AlN/GaN/InGaN/GaN DH-HEMTs with improved mobility grown by MOCVD
会议论文
9th international conference on solid-state and integrated-circuit technology, beijing, peoples r china, oct 20-23, 2008
作者:
Hou QF
;
Zhang ML
收藏
  |  
浏览/下载:51/0
  |  
提交时间:2010/03/09
ALGAN/GAN HEMTS
Electronic structures of wurtzite ZnO and ZnO/MgZnO quantum well
期刊论文
journal of crystal growth, 2006, 卷号: 287, 期号: 1, 页码: 28-33
Fan WJ
;
Abiyasa AP
;
Tan ST
;
Yu SF
;
Sun XW
;
Xia JB
;
Yeo YC
;
Li MF
;
Chong TC
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  |  
浏览/下载:99/0
  |  
提交时间:2010/04/11
computer simulation
low dimensional structures
zinc compounds
semiconducting II-VI materials
OPTICAL GAIN SPECTRA
BAND-STRUCTURES
ROOM-TEMPERATURE
LASERS
Growth and characterization of 0.8-mu m gate length AlGaN/GaN HEMTs on sapphire substrates
期刊论文
science in china series f-information sciences, 2005, 卷号: 48, 期号: 6, 页码: 808-814
Wang XL
;
Wang CM
;
Hu GX
;
Wang JX
;
Ran JX
;
Fang CB
;
Li JP
;
Zeng YP
;
Li JM
;
Liu XY
;
Liu J
;
Qian H
收藏
  |  
浏览/下载:325/7
  |  
提交时间:2010/04/11
HEMT
GaN
MOCVD
power device
FIELD-EFFECT TRANSISTORS
SURFACE PASSIVATION
Structure, stability and photoelectronic properties of transition films from amorphous to microcrystalline silicon
期刊论文
journal of crystal growth, 2005, 卷号: 281, 期号: 2-4, 页码: 344-348
Hao, HY
;
Liao, XB
;
Zeng, XB
;
Diao, HW
;
Xu, Y
;
Kong, GL
收藏
  |  
浏览/下载:47/14
  |  
提交时间:2010/03/17
nanostructures
Characteristics of AlGaN/GaN HEMTs Grown by Plasma-Assisted Molecular Beam Epitaxy
期刊论文
半导体学报, 2004, 卷号: 25, 期号: 2, 页码: 121-125
Wang Xiaoliang
;
Hu Guoxin
;
Wang Junxi
;
Liu Xinyu
;
Liu Hongxin
;
Sun Dianzhao
;
Zeng Yiping
;
Qian He
;
Li Jinmin
;
Kong Meiying
;
Lin Lanying
收藏
  |  
浏览/下载:20/0
  |  
提交时间:2010/11/23
Space grown semi-insulating gallium arsenide single crystal and its application
会议论文
g0 1 symposium of cospar scientific commission g held at the 33rd cospar scientific assembly, warsaw, poland, jul, 2000
Chen NF
;
Zhong XR
;
Zhang M
;
Lin LY
收藏
  |  
浏览/下载:14/0
  |  
提交时间:2010/11/15
SEMIINSULATING GAAS
STOICHIOMETRY
DEFECTS
Influence of combined InAlAs and InGaAs strain-reducing laser on luminescence properties of InAs/GaAs quantum dots
期刊论文
journal of crystal growth, 2002, 卷号: 234, 期号: 2-3, 页码: 354-358
作者:
Xu B
;
Jiang DS
;
Wang ZG
收藏
  |  
浏览/下载:84/7
  |  
提交时间:2010/08/12
nanostructures
molecular beam epitaxy
semiconductor III-V materials
laser diodes
1.3 MU-M
CONTINUOUS-WAVE OPERATION
TEMPERATURE-DEPENDENCE
LASING CHARACTERISTICS
1.3-MU-M
PHOTOLUMINESCENCE
GAIN
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