Electronic structures of wurtzite ZnO and ZnO/MgZnO quantum well | |
Fan WJ ; Abiyasa AP ; Tan ST ; Yu SF ; Sun XW ; Xia JB ; Yeo YC ; Li MF ; Chong TC | |
刊名 | journal of crystal growth |
2006 | |
卷号 | 287期号:1页码:28-33 |
关键词 | computer simulation low dimensional structures zinc compounds semiconducting II-VI materials OPTICAL GAIN SPECTRA BAND-STRUCTURES ROOM-TEMPERATURE LASERS |
ISSN号 | 0022-0248 |
通讯作者 | fan, wj, nanyang technol univ, sch elect & elect engn, singapore 639798, singapore. e-mail: ewjfan@ntu.edu.sg |
中文摘要 | the band structures of wurtzite zno are calculated using the empirical pseudopotential method (epm). the 8 parameters of the zn and o atom pesudopotential form factors with schluter's formula are obtained. the effective mass parameters are extracted by using k.p hamiltonian to fit the epm results. the calculated band edge energies (e-g, e-a, e-b, and e-c) at gamma point are in good agreement with experimental results. the ordering of zno at the top of valence band is found to be a(gamma(7))-b(gamma(9))-c(gamma(7)) due to a negative spin-orbit (so) splitting. based on the band parameters obtained, the valence hole subbands of wurzite zno/mgxzn1-xo tensile-strained quantum wells (qws) with different well widths and mg compositions are calculated using 6-band k.p method. (c) 2005 elsevier b.v. all rights reserved. |
学科主题 | 半导体材料 |
收录类别 | SCI |
语种 | 英语 |
公开日期 | 2010-04-11 |
内容类型 | 期刊论文 |
源URL | [http://ir.semi.ac.cn/handle/172111/10874] |
专题 | 半导体研究所_中国科学院半导体研究所(2009年前) |
推荐引用方式 GB/T 7714 | Fan WJ,Abiyasa AP,Tan ST,et al. Electronic structures of wurtzite ZnO and ZnO/MgZnO quantum well[J]. journal of crystal growth,2006,287(1):28-33. |
APA | Fan WJ.,Abiyasa AP.,Tan ST.,Yu SF.,Sun XW.,...&Chong TC.(2006).Electronic structures of wurtzite ZnO and ZnO/MgZnO quantum well.journal of crystal growth,287(1),28-33. |
MLA | Fan WJ,et al."Electronic structures of wurtzite ZnO and ZnO/MgZnO quantum well".journal of crystal growth 287.1(2006):28-33. |
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