Characteristics of AlGaN/GaN HEMTs Grown by Plasma-Assisted Molecular Beam Epitaxy

CORC > 半导体研究所 > 中国科学院半导体研究所 > 中国科学院半导体研究所（2009年前）

	Characteristics of AlGaN/GaN HEMTs Grown by Plasma-Assisted Molecular Beam Epitaxy
	Wang Xiaoliang ; Hu Guoxin ; Wang Junxi ; Liu Xinyu ; Liu Hongxin ; Sun Dianzhao ; Zeng Yiping ; Qian He ; Li Jinmin ; Kong Meiying ; Lin Lanying
刊名	半导体学报
	2004
卷号	25 期号:2 页码:121-125
中文摘要	algan/gan high electron mobility transistor (hemt) materials are grown by rf plasma-assisted molecular beam epitaxy (rf-mbe) and hemt devices are fabricated and characterized. the hemt materials have a mobility of 1035cm~2/(v ? s) at sheet electron concentration of 1.0 * 10~(13)cm~(-2) at room temperature. for the de-vices fabricated using the malt-rials,a maximum saturation drain-current density of 925ma/mm and a peak extrinsic iransecmductance of ihfims/mm are obtained on devices with gate length and width of l/-im and 80/im respectively. the f_t, unit-current-gain frequency of the devices,is about 18. 8ghz.
英文摘要	algan/gan high electron mobility transistor (hemt) materials are grown by rf plasma-assisted molecular beam epitaxy (rf-mbe) and hemt devices are fabricated and characterized. the hemt materials have a mobility of 1035cm~2/(v ? s) at sheet electron concentration of 1.0 * 10~(13)cm~(-2) at room temperature. for the de-vices fabricated using the malt-rials,a maximum saturation drain-current density of 925ma/mm and a peak extrinsic iransecmductance of ihfims/mm are obtained on devices with gate length and width of l/-im and 80/im respectively. the f_t, unit-current-gain frequency of the devices,is about 18. 8ghz.; 于2010-11-23批量导入; zhangdi于2010-11-23 13:06:52导入数据到semi-ir的ir; made available in dspace on 2010-11-23t05:06:52z (gmt). no. of bitstreams: 1 4844.pdf: 418347 bytes, checksum: 2ff829684b6dce47aa36f0f3742315b3 (md5) previous issue date: 2004; 国家重点基础研究发展规划（nos.g2 683,2 2cb3119 3),国家自然科学基金（批准号; institute of semiconductors, the chinese academy of sciences;microelectronics r&d center, the chinese academy of sciences;microelectronics r&d center, the chinese academy of sciences
学科主题	半导体材料
收录类别	CSCD
资助信息	国家重点基础研究发展规划（nos.g2 683,2 2cb3119 3),国家自然科学基金（批准号
语种	英语
公开日期	2010-11-23 ; 2011-04-29
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/17621]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Wang Xiaoliang,Hu Guoxin,Wang Junxi,et al. Characteristics of AlGaN/GaN HEMTs Grown by Plasma-Assisted Molecular Beam Epitaxy[J]. 半导体学报,2004,25(2):121-125.
APA	Wang Xiaoliang.,Hu Guoxin.,Wang Junxi.,Liu Xinyu.,Liu Hongxin.,...&Lin Lanying.(2004).Characteristics of AlGaN/GaN HEMTs Grown by Plasma-Assisted Molecular Beam Epitaxy.半导体学报,25(2),121-125.
MLA	Wang Xiaoliang,et al."Characteristics of AlGaN/GaN HEMTs Grown by Plasma-Assisted Molecular Beam Epitaxy".半导体学报 25.2(2004):121-125.