Growth and characterization of 0.8-mu m gate length AlGaN/GaN HEMTs on sapphire substrates

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	Growth and characterization of 0.8-mu m gate length AlGaN/GaN HEMTs on sapphire substrates
	Wang XL ; Wang CM ; Hu GX ; Wang JX ; Ran JX ; Fang CB ; Li JP ; Zeng YP ; Li JM ; Liu XY ; Liu J ; Qian H
刊名	science in china series f-information sciences
	2005
卷号	48 期号:6 页码:808-814
关键词	HEMT GaN MOCVD power device FIELD-EFFECT TRANSISTORS SURFACE PASSIVATION
ISSN号	1009-2757
通讯作者	wang, xl, chinese acad sci, inst semicond, beijing 100083, peoples r china. e-mail: xlwang@red.semi.ac.cn
中文摘要	algan/gan high electron mobility transistor (hemt) structures were grown on 2 inch sapphire substrates by mocvd, and 0.8-mu m gate length devices were fabricated and measured. it is shown by resistance mapping that the hemt structures have an average sheet resistance of approximately 380 omega/sq with a uniformity of more than 96%. the 1-mm gate width devices using the materials yielded a pulsed drain current of 784 ma/mm at v-gs=0.5 v and v-ds=7 v with an extrinsic transconductance of 200 ms/mm. a 20-ghz unity current gain cutoff frequency (f(t)) and a 28-ghz maximum oscillation frequency (f(max)) were obtained. the device with a 0.6-mm gate width yielded a total output power of 2.0 w/mm (power density of 3.33 w/mm) with 41% power added efficiency (pae) at 4 ghz.
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2010-04-11
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/10868]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Wang XL,Wang CM,Hu GX,et al. Growth and characterization of 0.8-mu m gate length AlGaN/GaN HEMTs on sapphire substrates[J]. science in china series f-information sciences,2005,48(6):808-814.
APA	Wang XL.,Wang CM.,Hu GX.,Wang JX.,Ran JX.,...&Qian H.(2005).Growth and characterization of 0.8-mu m gate length AlGaN/GaN HEMTs on sapphire substrates.science in china series f-information sciences,48(6),808-814.
MLA	Wang XL,et al."Growth and characterization of 0.8-mu m gate length AlGaN/GaN HEMTs on sapphire substrates".science in china series f-information sciences 48.6(2005):808-814.