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A comparative study on top-gated and bottom-gated multilayer MoS2 transistors with gate stacked dielectric of Al2O3/HfO2 期刊论文
NANOTECHNOLOGY, 2018, 卷号: 29, 期号: 24
作者:  Zou, Xiao;  Xu, Jingping;  Huang, Hao;  Zhu, Ziqang;  Wang, Hongjiu
收藏  |  浏览/下载:2/0  |  提交时间:2019/12/05
In situ study on the thermal stability and interfaces properties of er2o3/al2o3/si multi stacked films by x-ray photoelectron spectroscopy 期刊论文
Superlattices and microstructures, 2017, 卷号: 104, 页码: 415-421
作者:  Gao, Baolong;  Mamat, Mamatrishat;  Ghupur, Yasenjan;  Ablat, Abduleziz;  Ibrahim, Kurash
收藏  |  浏览/下载:33/0  |  提交时间:2019/04/23
Interface quality modulation, band alignment modification and optimization of electrical properties of HfGdO/Ge gate stacks by nitrogen incorporation 期刊论文
JOURNAL OF ALLOYS AND COMPOUNDS, 2017, 卷号: 695, 期号: 无, 页码: 2199-2206
作者:  Gao, J.;  He, G.;  Fang, Z. B.;  Lv, J. G.;  Liu, M.
收藏  |  浏览/下载:16/0  |  提交时间:2018/07/04
In situ study on the thermal stability and interfaces properties of Er2O3/Al2O3/Si multi stacked films by X-ray photoelectron spectroscopy 期刊论文
SUPERLATTICES AND MICROSTRUCTURES, 2017, 卷号: 104, 页码: 415-421
作者:  Ablat, A;  Ibrahim, K;  Wang, JO;  Liu, C;  Zhao, JL
收藏  |  浏览/下载:18/0  |  提交时间:2019/08/27
Influence of different conditions on the electrical performance of amorphous InGaZnO thin-film transistors with HfO2/SiNx stacked dielectrics 期刊论文
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2017, 卷号: 35
作者:  Wang, RuoZheng;  Wu, ShengLi;  Jia, DongBo;  Wei, Qiang;  Zhang, JinTao
收藏  |  浏览/下载:5/0  |  提交时间:2019/11/26
The electrical performance and gate bias stability of an amorphous InGaZnO thin-film transistor with HfO2 high-k dielectrics 期刊论文
SOLID-STATE ELECTRONICS, 2017, 卷号: 133, 页码: 6-9
作者:  Wang, Ruo Zheng;  Wu, Sheng Li;  Li, Xin Yu;  Zhang, Jin Tao
收藏  |  浏览/下载:3/0  |  提交时间:2019/11/26
Two-bit memory and quantized storage phenomenon in conventional MOS structures with double-stacked Pt-NCs in an HfAlO matrix 期刊论文
PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 2016, 卷号: 18, 期号: 9, 页码: 6509-6514
作者:  Zhou, Guangdong;  Wu, Bo;  Liu, Xiaoqin;  Li, Ping;  Zhang, Shuangju
收藏  |  浏览/下载:18/0  |  提交时间:2016/06/27
Conduction Mechanisms and Breakdown Characteristics of Al2O3-Doped ZrO2 High-k Dielectrics for Three-Dimensional Stacked Metal-Insulator-Metal Capacitors 期刊论文
IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, 2014, 卷号: 14, 页码: 154-160
作者:  Knebel, Steve;  Schroeder, Uwe;  Zhou, Dayu;  Mikolajick, Thomas;  Krautheim, Gunter
收藏  |  浏览/下载:13/0  |  提交时间:2019/12/09
Low-Voltage Oxide-Based Electric-Double-Layer TFTs Gated by Stacked SiO2 Electrolyte/Chitosan Hybrid Dielectrics 期刊论文
IEEE ELECTRON DEVICE LETTERS, 2012, 期号: 6, 页码: 848—850
Wan Q(万青); Wei Dou, Jie Jiang, Jia Sun, Bin Zhou, and Qing Wan
收藏  |  浏览/下载:12/0  |  提交时间:2013/12/16
In-Plane-Gate Oxide-Based Thin-Film Transistors Self-Aligned on Stacked Self-Assembled Monolayer/SiO2 Electrolyte Dielectrics 期刊论文
IEEE ELECTRON DEVICE LETTERS, 2012, 卷号: 3, 期号: 4, 页码: 531—533
Wan Q(万青); Guodong Wu, Hongliang Zhang, Liqiang Zhu, Mingzhi Dai, Ping Cui, and Qing Wan
收藏  |  浏览/下载:14/0  |  提交时间:2013/12/16


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