×
验证码:
换一张
忘记密码?
记住我
CORC
首页
科研机构
检索
知识图谱
申请加入
托管服务
登录
注册
在结果中检索
科研机构
西安交通大学 [2]
大连理工大学 [2]
宁波材料技术与工程研... [2]
高能物理研究所 [2]
湖南大学 [2]
昆明植物研究所 [1]
更多...
内容类型
期刊论文 [15]
发表日期
2018 [1]
2017 [5]
2016 [1]
2014 [1]
2012 [3]
2010 [1]
更多...
学科主题
物理化学 [2]
Physics, A... [1]
×
知识图谱
CORC
开始提交
已提交作品
待认领作品
已认领作品
未提交全文
收藏管理
QQ客服
官方微博
反馈留言
浏览/检索结果:
共15条,第1-10条
帮助
已选(
0
)
清除
条数/页:
5
10
15
20
25
30
35
40
45
50
55
60
65
70
75
80
85
90
95
100
排序方式:
请选择
作者升序
作者降序
题名升序
题名降序
发表日期升序
发表日期降序
提交时间升序
提交时间降序
A comparative study on top-gated and bottom-gated multilayer MoS2 transistors with gate stacked dielectric of Al2O3/HfO2
期刊论文
NANOTECHNOLOGY, 2018, 卷号: 29, 期号: 24
作者:
Zou, Xiao
;
Xu, Jingping
;
Huang, Hao
;
Zhu, Ziqang
;
Wang, Hongjiu
收藏
  |  
浏览/下载:2/0
  |  
提交时间:2019/12/05
multilayer MoS2
field-effect transistors
stacked dielectrics
encapsulation
reliability
In situ study on the thermal stability and interfaces properties of er2o3/al2o3/si multi stacked films by x-ray photoelectron spectroscopy
期刊论文
Superlattices and microstructures, 2017, 卷号: 104, 页码: 415-421
作者:
Gao, Baolong
;
Mamat, Mamatrishat
;
Ghupur, Yasenjan
;
Ablat, Abduleziz
;
Ibrahim, Kurash
收藏
  |  
浏览/下载:33/0
  |  
提交时间:2019/04/23
High-k dielectric
Pld
Er2o3
Xps
Interface quality modulation, band alignment modification and optimization of electrical properties of HfGdO/Ge gate stacks by nitrogen incorporation
期刊论文
JOURNAL OF ALLOYS AND COMPOUNDS, 2017, 卷号: 695, 期号: 无, 页码: 2199-2206
作者:
Gao, J.
;
He, G.
;
Fang, Z. B.
;
Lv, J. G.
;
Liu, M.
收藏
  |  
浏览/下载:16/0
  |  
提交时间:2018/07/04
High-k Gate Dielectrics
Interface Quality
Band Alignment
Electrical Properties
Leakage Current Mechanism
In situ study on the thermal stability and interfaces properties of Er2O3/Al2O3/Si multi stacked films by X-ray photoelectron spectroscopy
期刊论文
SUPERLATTICES AND MICROSTRUCTURES, 2017, 卷号: 104, 页码: 415-421
作者:
Ablat, A
;
Ibrahim, K
;
Wang, JO
;
Liu, C
;
Zhao, JL
收藏
  |  
浏览/下载:18/0
  |  
提交时间:2019/08/27
High-k dielectric
PLD
Er2O3
XPS
Influence of different conditions on the electrical performance of amorphous InGaZnO thin-film transistors with HfO2/SiNx stacked dielectrics
期刊论文
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2017, 卷号: 35
作者:
Wang, RuoZheng
;
Wu, ShengLi
;
Jia, DongBo
;
Wei, Qiang
;
Zhang, JinTao
收藏
  |  
浏览/下载:5/0
  |  
提交时间:2019/11/26
The electrical performance and gate bias stability of an amorphous InGaZnO thin-film transistor with HfO2 high-k dielectrics
期刊论文
SOLID-STATE ELECTRONICS, 2017, 卷号: 133, 页码: 6-9
作者:
Wang, Ruo Zheng
;
Wu, Sheng Li
;
Li, Xin Yu
;
Zhang, Jin Tao
收藏
  |  
浏览/下载:3/0
  |  
提交时间:2019/11/26
HfO2
Stacked dielectrics
Threshold voltage shift
Transfer characteristics
Negative and positive gate bias stress
Two-bit memory and quantized storage phenomenon in conventional MOS structures with double-stacked Pt-NCs in an HfAlO matrix
期刊论文
PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 2016, 卷号: 18, 期号: 9, 页码: 6509-6514
作者:
Zhou, Guangdong
;
Wu, Bo
;
Liu, Xiaoqin
;
Li, Ping
;
Zhang, Shuangju
收藏
  |  
浏览/下载:18/0
  |  
提交时间:2016/06/27
Conduction Mechanisms and Breakdown Characteristics of Al2O3-Doped ZrO2 High-k Dielectrics for Three-Dimensional Stacked Metal-Insulator-Metal Capacitors
期刊论文
IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, 2014, 卷号: 14, 页码: 154-160
作者:
Knebel, Steve
;
Schroeder, Uwe
;
Zhou, Dayu
;
Mikolajick, Thomas
;
Krautheim, Gunter
收藏
  |  
浏览/下载:13/0
  |  
提交时间:2019/12/09
High-k
leakage model
metal-insulator-metal (MIM) capacitor
reliability
ZrO2
Low-Voltage Oxide-Based Electric-Double-Layer TFTs Gated by Stacked SiO2 Electrolyte/Chitosan Hybrid Dielectrics
期刊论文
IEEE ELECTRON DEVICE LETTERS, 2012, 期号: 6, 页码: 848—850
Wan Q(万青)
;
Wei Dou, Jie Jiang, Jia Sun, Bin Zhou, and Qing Wan
收藏
  |  
浏览/下载:12/0
  |  
提交时间:2013/12/16
In-Plane-Gate Oxide-Based Thin-Film Transistors Self-Aligned on Stacked Self-Assembled Monolayer/SiO2 Electrolyte Dielectrics
期刊论文
IEEE ELECTRON DEVICE LETTERS, 2012, 卷号: 3, 期号: 4, 页码: 531—533
Wan Q(万青)
;
Guodong Wu, Hongliang Zhang, Liqiang Zhu, Mingzhi Dai, Ping Cui, and Qing Wan
收藏
  |  
浏览/下载:14/0
  |  
提交时间:2013/12/16
©版权所有 ©2017 CSpace - Powered by
CSpace