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CORC

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Annealing-induced evolution in interface stability and electrical performance of sputtering-driven rare-earth-based gate oxides 期刊论文
JOURNAL OF ALLOYS AND COMPOUNDS, 2019, 卷号: 778, 期号: 无, 页码: 579-587
作者:  Wang, Die;  He, Gang;  Liang, Shuang;  Liu, Mao
收藏  |  浏览/下载：56/0  |  提交时间：2020/03/31
Annealing-induced evolution in interface stability and electrical performance of sputtering-driven rare-earth-based gate oxides 期刊论文
Journal of Alloys and Compounds, 2019, 卷号: Vol.778, 页码: 579-587
作者:  Shuang Liang;  Die Wang;  Mao Liu;  Gang He
收藏  |  浏览/下载：9/0  |  提交时间：2019/04/24
High-k Spacer Consideration of Ultrascaled Gate-All-Around Junctionless Transistor in Ballistic Regime 期刊论文
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2018, 卷号: 65, 期号: 12, 页码: 5282-5288
作者:  Yang YM(杨育梅)
收藏  |  浏览/下载：6/0  |  提交时间：2020/11/13
High-k Spacer Consideration of Ultrascaled Gate-All-Around Junctionless Transistor in Ballistic Regime 期刊论文
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2018, 卷号: 65, 期号: 12, 页码: 5282-5288
作者:  Yang, Yumei;  Lou, Haijun;  Lin, Xinnan
收藏  |  浏览/下载：10/0  |  提交时间：2019/11/15
Organic Field-Effect Transistor for Energy-Related Applications: Low-Power-Consumption Devices, Near-Infrared Phototransistors, and Organic Thermoelectric Devices 期刊论文
ADVANCED ENERGY MATERIALS, 2018, 卷号: 8, 期号: 24
作者:  Ren, Xiaochen;  Yang, Fangxu;  Gao, Xiong;  Cheng, Shanshan;  Zhang, Xiaotao
收藏  |  浏览/下载：50/0  |  提交时间：2019/04/09
Performance Enhancement for Charge Trapping Memory by Using Al2O3/HfO2/Al2O3 Tri-Layer High-k Dielectrics and High Work Function Metal Gate 期刊论文
ECS Journal of Solid State Science and Technology, 2018
作者:  Hou CZ(侯朝昭);  Wu ZH(吴振华);  Yin HX(殷华湘)
收藏  |  浏览/下载：23/0  |  提交时间：2019/05/05
Polymer/Silicon Nanoparticle Hybrid Layer as High-k Dielectrics in Organic Thin-Film Transistors 期刊论文
JOURNAL OF PHYSICAL CHEMISTRY C, 2018, 卷号: 122, 期号: 21, 页码: 11214-11221
作者:  Wang, Xuesong;  Wang, He;  Li, Yao;  Shi, Zuosen;  Yan, Donghang
收藏  |  浏览/下载：44/0  |  提交时间：2019/04/09
Interface Modulation and Optimization of Electrical Properties of HfGdO/GaAs Gate Stacks by ALD-Derived Al2O3 Passivation Layer and Forming Gas Annealing 期刊论文
ADVANCED ELECTRONIC MATERIALS, 2018, 卷号: 4, 期号: 4, 页码: 9
作者:  Jiang, Shanshan;  He, Gang;  Liu, Mao;  Zhu, Li;  Liang, Shuang
收藏  |  浏览/下载：65/0  |  提交时间：2019/06/10
The total ionizing dose effect on SiO2 and new high-k gate dielectrics under gamma-ray irradiation 会议论文
作者:  Ding, Man;  Cheng, Yonghong
收藏  |  浏览/下载：13/0  |  提交时间：2019/11/19
Fully solution-induced high performance indium oxide thin film transistors with ZrOx high-k gate dielectrics 期刊论文
RSC Advances, 2018, 卷号: Vol.8 No.30, 页码: 16788-16799
作者:  Jianguo Lv;  Li Zhu;  Elvira Fortunato;  Gang He;  Rodrigo Martins
收藏  |  浏览/下载：10/0  |  提交时间：2019/04/22

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