Performance Enhancement for Charge Trapping Memory by Using Al2O3/HfO2/Al2O3 Tri-Layer High-k Dielectrics and High Work Function Metal Gate

	Performance Enhancement for Charge Trapping Memory by Using Al2O3/HfO2/Al2O3 Tri-Layer High-k Dielectrics and High Work Function Metal Gate
	Hou CZ(侯朝昭); Wu ZH(吴振华); Yin HX(殷华湘)
刊名	ECS Journal of Solid State Science and Technology
	2018-07-19
文献子类	期刊论文
内容类型	期刊论文
源URL	[http://159.226.55.107/handle/172511/19090]
专题	微电子研究所_集成电路先导工艺研发中心
作者单位	中国科学院微电子研究所
推荐引用方式 GB/T 7714	Hou CZ,Wu ZH,Yin HX. Performance Enhancement for Charge Trapping Memory by Using Al2O3/HfO2/Al2O3 Tri-Layer High-k Dielectrics and High Work Function Metal Gate[J]. ECS Journal of Solid State Science and Technology,2018.
APA	Hou CZ,Wu ZH,&Yin HX.(2018).Performance Enhancement for Charge Trapping Memory by Using Al2O3/HfO2/Al2O3 Tri-Layer High-k Dielectrics and High Work Function Metal Gate.ECS Journal of Solid State Science and Technology.
MLA	Hou CZ,et al."Performance Enhancement for Charge Trapping Memory by Using Al2O3/HfO2/Al2O3 Tri-Layer High-k Dielectrics and High Work Function Metal Gate".ECS Journal of Solid State Science and Technology (2018).