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CORC

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The influence of point defects on AlGaN-based deep ultraviolet LEDs 期刊论文
Journal of Alloys and Compounds, 2020, 卷号: 845, 页码: 156177
作者:  Zhanhong Ma ;  Abdulaziz Almalki ;  Xin Yang ;  Xing Wu ;  Xin Xi ;  Jing Li ;  Shan Lin ;  Xiaodong Li ;  Saud Alotaibi ;  Maryam Al huwayz ;  Mohamed Henini ;  Lixia Zhao
收藏  |  浏览/下载：12/0  |  提交时间：2021/05/21
AlGaN-based UV-C distributed Bragg reflector with a -cavity designed for an external cavity structure electron-beam-pumped VCSEL 期刊论文
Journal of Alloys and Compounds, 2020, 卷号: 820
作者:  Y. R. Chen, Z. W. Zhang, G. Q. Miao, H. Jiang, Z. M. Li and H. Song
收藏  |  浏览/下载：3/0  |  提交时间：2021/07/06
Analysis of the back-barrier effect in AlGaN/GaN high electron mobility transistor on free-standing GaN substrates 期刊论文
Journal of Alloys and Compounds, 2020, 卷号: 814, 页码: 6
作者:  X. K. Liu, H. Y. Wang, H. C. Chiu, Y. X. Chen, D. B. Li, C. R. Huang, H. L. Kao, H. C. Kuo and S. W. H. Chen
收藏  |  浏览/下载：3/0  |  提交时间：2021/07/06
AlGaN-based ultraviolet light-emitting diode on high-temperature annealed sputtered AlN template 期刊论文
Journal of Alloys and Compounds, 2019, 卷号: 794, 页码: 8-12
作者:  Ruxue Ni ;   Chang-Cheng Chuo ;   Kun Yang ;   Yujie Ai ;   Lian Zhang ;   Zhe Cheng ;   Zhe Liu ;   Lifang Jia ;   Yun Zhang
收藏  |  浏览/下载：10/0  |  提交时间：2020/07/31
Roomerature Electrically Injected AlGaN-Based near-Ultraviolet Laser Grown on Si 期刊论文
ACS Photonics, 2018, 卷号: 5, 期号: 3, 页码: 699-704
作者:  Feng, Meixin;  Li, Zengcheng;  Wang, Jin;  Zhou, Rui;  Sun, Qian
收藏  |  浏览/下载：2/0  |  提交时间：2019/09/17
Deep-ultraviolet stimulated emission from AlGaN/AlN multiple-quantum-wells on nano-patterned AlN/sapphire templates with reduced threshold power density 期刊论文
Journal of Alloys and Compounds, 2017, 卷号: 723, 期号: 06, 页码: 001-200
作者:  Xiang Chen;  Yun Zhang;  Jianchang Yan;  Yanan Guo;  Shuo Zhang
收藏  |  浏览/下载：16/0  |  提交时间：2018/11/30
Growth of high-quality AlGaN epitaxial films on Si substrates (EI收录) 期刊论文
Materials Letters, 2017, 卷号: 207, 页码: 133-136
作者:  Li, Yuan[1,2];  Wang, Wenliang[1,2,3];  Lin, Yunhao[1,2];  Li, Xiaochan[1,2];  Huang, Liegen[1,2]
收藏  |  浏览/下载：117/0  |  提交时间：2019/04/24
GaN high electron mobility transistors with AlInN back barriers 期刊论文
JOURNAL OF ALLOYS AND COMPOUNDS, 2016, 卷号: 662
作者:  He, XG;  Zhao, DG;  Jiang, DS;  Zhu, JJ;  Chen, P
收藏  |  浏览/下载：18/0  |  提交时间：2017/03/11
Effect of GaN buffer polarization on electron distribution of AlGaN/GaN heterostructure 期刊论文
journal of alloys and compounds, 2016, 卷号: 670, 页码: 258-261
Xiaoguang He; Degang Zhao; Wei Liu; Jing Yang; Xiaojing Li; Xiang Li
收藏  |  浏览/下载：11/0  |  提交时间：2017/03/10
InGaN太阳能电池的制备及特性研究 学位论文
2013, 2013
蔡晓梅
收藏  |  浏览/下载：3/0  |  提交时间：2016/01/13

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