Analysis of the back-barrier effect in AlGaN/GaN high electron mobility transistor on free-standing GaN substrates

doi:10.1016/j.jallcom.2019.152293

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	Analysis of the back-barrier effect in AlGaN/GaN high electron mobility transistor on free-standing GaN substrates
	X. K. Liu, H. Y. Wang, H. C. Chiu, Y. X. Chen, D. B. Li, C. R. Huang, H. L. Kao, H. C. Kuo and S. W. H. Chen
刊名	Journal of Alloys and Compounds
	2020
卷号	814 页码:6
ISSN号	0925-8388
DOI	10.1016/j.jallcom.2019.152293
英文摘要	The effect of AlGaN back-barrier on AlGaN/GaN high electron mobility transistors (HEMTs) using freestanding GaN wafer has been investigated in this work. With the introducing back-barrier structure, the leakage path underneath the buffer (native nitrogen-vacancies and GaOx compounds of the HVPE-grown free-standing GaN surface) layer can be suppressed by lift-up the conduction band. As compared with AlGaN/GaN HEMTs on SiC wafer, AlGaN/GaN HEMTs on free-standing GaN wafer show enhanced drain current ( 700 mA/mm), improved transconductance (143 mS/mm), less current collapse (12%), higher current gain cut-off frequency (13 GHz), and maximum stable gain cut-off frequency (24 GHz), which is attributed to the higher epi quality layer on free-standing GaN wafer. (C) 2019 Elsevier B.V. All rights reserved.
URL标识	查看原文
语种	英语
内容类型	期刊论文
源URL	[http://ir.ciomp.ac.cn/handle/181722/64304]
专题	中国科学院长春光学精密机械与物理研究所
推荐引用方式 GB/T 7714	X. K. Liu, H. Y. Wang, H. C. Chiu, Y. X. Chen, D. B. Li, C. R. Huang, H. L. Kao, H. C. Kuo and S. W. H. Chen. Analysis of the back-barrier effect in AlGaN/GaN high electron mobility transistor on free-standing GaN substrates[J]. Journal of Alloys and Compounds,2020,814:6.
APA	X. K. Liu, H. Y. Wang, H. C. Chiu, Y. X. Chen, D. B. Li, C. R. Huang, H. L. Kao, H. C. Kuo and S. W. H. Chen.(2020).Analysis of the back-barrier effect in AlGaN/GaN high electron mobility transistor on free-standing GaN substrates.Journal of Alloys and Compounds,814,6.
MLA	X. K. Liu, H. Y. Wang, H. C. Chiu, Y. X. Chen, D. B. Li, C. R. Huang, H. L. Kao, H. C. Kuo and S. W. H. Chen."Analysis of the back-barrier effect in AlGaN/GaN high electron mobility transistor on free-standing GaN substrates".Journal of Alloys and Compounds 814(2020):6.