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CORC

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Enhancement of Negative Differential Mobility Effect in Recessed Barrier Layer AlGaN/GaN HEMT for Terahertz Applications 期刊论文
IEEE Transactions on Electron Devices, 2019, 卷号: Vol.66 No.3, 页码: 1236-1242
作者:  Hongliang Zhao;  Lin-An Yang;  Hao Zou;  Xiao-hua Ma;  Yue Hao
收藏  |  浏览/下载：35/0  |  提交时间：2019/12/17
TCAD Simulation for nonresonant terahertz detector based on double-channel GaN/AlGaN high-electron-mobility transistor 期刊论文
IEEE Transactions on Electron Devices, 2018, 卷号: 65, 页码: 4807-4813
作者:  Meng, Qingzhi;  Lin, Qijing;  Jing, Weixuan;  Han, Feng;  Zhao, Man
收藏  |  浏览/下载：44/0  |  提交时间：2019/11/19
Au-Free AlGaN/GaN MIS-HEMTs With Embedded Current Sensing Structure for Power Switching Applications 期刊论文
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2017, 卷号: 64, 页码: 3515-3518
作者:  Sun, Ruize;  Liang, Yung C.;  Yeo, Yee-Chia;  Zhao, Cezhou
收藏  |  浏览/下载：4/0  |  提交时间：2019/11/26
Realistic Trap Configuration Scheme With Fabrication Processes in Consideration for the Simulations of AlGaN/GaN MIS-HEMT Devices 会议论文
作者:  Sun, Ruize;  Liang, Yung C.;  Yeo, Yee-Chia;  Wang, Yun-Hsiang;  Zhao, Cezhou
收藏  |  浏览/下载：4/0  |  提交时间：2019/12/02
Compound Semiconductor Materials and Devices 期刊论文
Synthesis Lectures on Emerging Engineering Technologies, 2016, 卷号: 2, 页码: 1-75
作者:  Liu, Zhaojun;  Huang, Tongde;  Li, Qiang;  Lu, Xing;  Zou, Xinbo
收藏  |  浏览/下载：3/0  |  提交时间：2019/11/26
Normally Off AlGaN/GaN MIS-High-Electron Mobility Transistors Fabricated by Using Low Pressure Chemical Vapor Deposition Si3N4 Gate Dielectric and Standard Fluorine Ion Implantation 期刊论文
IEEE ELECTRON DEVICE LETTERS, 2015, 卷号: 36, 期号: 11, 页码: 4
作者:  Zhang, ZL(张志利);  Fu, K(付凯);  Deng, XG(邓旭光);  Zhang, XD(张晓东);  Fan, YM(范亚明)
收藏  |  浏览/下载：66/0  |  提交时间：2015/12/31
A method for extraction of electron mobility in power HEMTs 期刊论文
SUPERLATTICES AND MICROSTRUCTURES, 2015, 卷号: 85, 页码: 543-550
作者:  Arninbeidokhti, Amirhossein;  Dimitrijev, Sima;  Han, Jisheng;  Xu, Xiangang;  Wang, Chengxin
收藏  |  浏览/下载：22/0  |  提交时间：2019/12/17
A method for extraction of electron mobility in power HEMTs 期刊论文
Superlattices and microstructures, 2015, 页码: 543-550
作者:  Arninbeidokhti, Amirhossein;  Dimitrijev, Sima;  Han, Jisheng;  Xu, Xiangang;  Wang, Chengxin
收藏  |  浏览/下载：9/0  |  提交时间：2019/12/17
A novel method for measuring parasitic resistance in high electron mobility transistors 期刊论文
固体电子学, 2014
Yang, Zhen; Wang, Jinyan; Li, Xiaoping; Zhang, Bo; Zhao, Jian; Xu, Zhe; Wang, Maojun; Yu, Min; Yang, Zhenchuan; Wu, Wengang; Zhang, Yuming; Zhang, Jincheng; Ma, Xiaohua; Hao, Yue
收藏  |  浏览/下载：6/0  |  提交时间：2015/11/10
A Double-Gate AlGaN/GaN HEMT With Improved Dynamic Performance 期刊论文
IEEE ELECTRON DEVICE LETTERS, 2013, 卷号: 34, 期号: 6, 页码: 747-749
作者:  Cai, Y(蔡勇);  Zhao, DS(赵德胜);  Qin, H(秦华);  Zhang, BS(张宝顺);  Zeng, CH(曾春红)
收藏  |  浏览/下载：25/0  |  提交时间：2013/12/30

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