×
验证码:
换一张
忘记密码?
记住我
CORC
首页
科研机构
检索
知识图谱
申请加入
托管服务
登录
注册
在结果中检索
科研机构
兰州大学 [159]
物理研究所 [39]
中国农业科学院 [18]
湖南大学 [16]
高能物理研究所 [11]
新疆理化技术研究所 [9]
更多...
内容类型
期刊论文 [284]
会议论文 [3]
发表日期
2022 [3]
2021 [3]
2020 [6]
2018 [9]
2017 [11]
2016 [27]
更多...
学科主题
astronomy... [88]
physics [41]
Metallurgy... [4]
Physics [4]
Materials ... [3]
Nanoscienc... [2]
更多...
×
知识图谱
CORC
开始提交
已提交作品
待认领作品
已认领作品
未提交全文
收藏管理
QQ客服
官方微博
反馈留言
浏览/检索结果:
共287条,第1-10条
帮助
已选(
0
)
清除
条数/页:
5
10
15
20
25
30
35
40
45
50
55
60
65
70
75
80
85
90
95
100
排序方式:
请选择
作者升序
作者降序
题名升序
题名降序
发表日期升序
发表日期降序
提交时间升序
提交时间降序
Context-wise attention-guided network for single image deraining
期刊论文
ELECTRONICS LETTERS, 2022, 卷号: 58, 期号: 4, 页码: 148-150
作者:
Fu B(傅博)
;
Jiang Y(姜勇)
;
Wang HG(王洪光)
;
Wang Q(王强)
;
Gao, Qian
收藏
  |  
浏览/下载:23/0
  |  
提交时间:2021/12/20
Total Ionizing Dose Effects of the Color Complementary Metal Oxide Semiconductor (CMOS) Image Sensor at Different Bias
期刊论文
JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS, 2022, 卷号: 17, 期号: 1, 页码: 121-127
作者:
Yang, ZK (Yang, Zhikang) [1] , [2]
;
Wen, L (Wen, Lin) [1]
;
Li, YD (Li, Yudong) [1]
;
Liu, BK (Liu, Bingkai) [1] , [2]
;
Fu, J (Fu, Jing) [1] , [2]
收藏
  |  
浏览/下载:21/0
  |  
提交时间:2022/06/21
Color CMOS Image Sensor
Radiation Damage
Total Ionizing Dose Effects
Bias Condition
Single event transient effect of frontside and backside illumination image sensors under proton irradiation
期刊论文
ACTA PHYSICA SINICA, 2022, 卷号: 71, 期号: 5, 页码: 1-9
作者:
Fu, J (Fu Jing) [1] , [2] , [3]
;
Cai, YL (Cai Yu-Long) [4]
;
Li, YD (Li Yu-Dong) [1] , [2]
;
Feng, J (Feng Jie) [1] , [2]
;
Wen, L (Wen Lin) [1] , [2]
收藏
  |  
浏览/下载:21/0
  |  
提交时间:2022/06/06
CMOS image sensor
proton irradiation
single event effect
transientbrightspot
Analysis of Dark Signal Degradation Caused by 1 MeV Neutron Irradiation on Backside-Illuminated CMOS Image Sensors
期刊论文
CHINESE JOURNAL OF ELECTRONICS, 2021, 卷号: 30, 期号: 1, 页码: 180-184
作者:
Liu, BK (Liu Bingkai)[ 1,2,3 ]
;
Li, YD (Li Yudong)[ 1,2 ]
;
Wen, L (Wen Lin)[ 1,2 ]
;
Zhou, D (Zhou Dong)[ 1,2 ]
;
Feng, J (Feng Jie)[ 1,2 ]
收藏
  |  
浏览/下载:32/0
  |  
提交时间:2021/05/10
Backside‐
illuminated CMOS image sensors
Dark signal behaviors
Displacement damage effects
Neutron irradiation
Mechanism of Ionization Damage in Large Eight-Transistor Complementary Metal-Oxide-Semiconductor Color Image Sensors
期刊论文
JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS, 2021, 卷号: 16, 期号: 11, 页码: 1755-1761
作者:
Feng, J (Feng, Jie) [1] , [2]
;
Fu, J (Fu, Jing) [1] , [2] , [3]
;
Li, YD (Li, Yu-Dong) [1] , [2]
;
Wen, L (Wen, Lin) [1] , [2]
;
Guo, Q (Guo, Qi) [1] , [2]
收藏
  |  
浏览/下载:23/0
  |  
提交时间:2022/03/24
CMOS Color Image Sensor
Ionization Damage
Radiation-Sensitive Parameters
Ground experiment of a 50 mm balloon-borne coronagraph for near space project
会议论文
Chengdu, China, 2021-06-14
作者:
Liu Y(刘煜)
;
Zhang XF(张雪飞)
;
Song TF(宋腾飞)
;
Sun, Mingzhe
;
Liu, Dayang
收藏
  |  
浏览/下载:58/0
  |  
提交时间:2022/03/07
coronagraph
scattered light
near space
Mt. Wumingshan
polarization brightness
The Evolution of the Broadband Temporal Features Observed in the Black-hole Transient MAXI J1820+070 with Insight-HXMT
期刊论文
ASTROPHYSICAL JOURNAL, 2020, 卷号: 896, 期号: 1, 页码: 33
作者:
Wang, YN
;
Ji, L
;
Zhang, SN
;
Mendez, M
;
Qu, JL
收藏
  |  
浏览/下载:100/0
  |  
提交时间:2020/09/27
Fabricating Pd isolated single atom sites on C3N4/rGO for heterogenization of homogeneous catalysis
期刊论文
NANO RESEARCH, 2020, 卷号: 13, 期号: 4, 页码: 947-951
作者:
Fu, NH
;
Liang, X
;
Li, Z
;
Chen, WX
;
Wang, Y
收藏
  |  
浏览/下载:28/0
  |  
提交时间:2021/09/06
GRAPHENE-OXIDE
NANOCRYSTALS
OXIDATION
REACTORS
STRATEGY
CO
A study of hot pixels induced by proton and neutron irradiations in charge coupled devices
期刊论文
RADIATION EFFECTS AND DEFECTS IN SOLIDS, 2020, 卷号: 175, 期号: 5-6, 页码: 540-550
作者:
Liu, BK (Liu, Bingkai)[ 1,2,3 ]
;
Li, YD (Li, Yudong)[ 1,2 ]
;
Wen, L (Wen, Lin)[ 1,2 ]
;
Zhou, D (Zhou, Dong)[ 1,2 ]
;
Feng, J (Feng, Jie)[ 1,2 ]
收藏
  |  
浏览/下载:43/0
  |  
提交时间:2020/07/06
Charge coupled devices (CCDs)
proton irradiation
neutron irradiation
hot pixels
displacement damage effects
Single-Event Effects in Pinned Photodiode CMOS Image Sensors: SET and SEL
期刊论文
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2020, 卷号: 67, 期号: 8, 页码: 1861-1868
作者:
Cai, YL (Cai, Yulong)[ 1,2 ]
;
Wen, L (Wen, Lin)[ 3 ]
;
Li, YD (Li, Yudong)[ 3 ]
;
Guo, Q (Guo, Qi)[ 3 ]
;
Zhou, D (Zhou, Dong)[ 3 ]
收藏
  |  
浏览/下载:25/0
  |  
提交时间:2020/09/09
Complementary metal-oxide-semiconductor
(CMOS) image sensors (CIS)
heavy ions
pulsed laser
single-event latchup (SEL)
single-event transient (SET)
©版权所有 ©2017 CSpace - Powered by
CSpace