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A study on repeatable and universal growth morphology optimization for nanowires grown on Si substrates 期刊论文
Vacuum, 2022, 卷号: 201
作者:  Wang, Xiaoye;  Bai, Xue;  Yang, Xiaoguang;  Du, Wenna;  Yang, Tao
收藏  |  浏览/下载：17/0  |  提交时间：2022/06/20
Stabilization of GaAs photoanodes by in situ deposition of nickel-borate surface catalysts as hole trapping sites 期刊论文
SUSTAINABLE ENERGY & FUELS, 2019, 卷号: 3, 期号: 3, 页码: 814-822
作者:  Jiang, Chaoran;  Wu, Jiang;  Moniz, Savio J. A.;  Guo, Daqian;  Tang, Mingchu
收藏  |  浏览/下载：55/0  |  提交时间：2019/06/20
Thermal and nonthermal melting of III-V compound semiconductors 期刊论文
PHYSICAL REVIEW B, 2019, 卷号: 99
作者:  Medvedev, Nikita;  Fang, Zhaoji;  Xia, Chenyi;  Li, Zheng
收藏  |  浏览/下载：9/0  |  提交时间：2019/12/30
Experimental investigation of loss and gain characteristics of an abnormal InxGa1-xAs/GaAs quantum well structure 期刊论文
CHINESE OPTICS LETTERS, 2018, 卷号: 16
作者:  Jia, Yan;  Yu, Qingnan;  Li, Fang;  Wang, Mingqing;  Lu, Wei
收藏  |  浏览/下载：14/0  |  提交时间：2019/12/30
Measurement of excited layer thickness in highly photo-excited GaAs 会议论文
international symposium on optical measurement technology and instrumentation, beijing, china, 2016-05-09
作者:  Liang, Lingliang;  Tian, Jinshou;  Wang, Tao;  Wu, Shengli;  Li, Fuli
收藏  |  浏览/下载：21/0  |  提交时间：2017/01/17
GaAs-on-insulator fabricated via ion-cut in epitaxial GaAs /Ge substrate 会议论文
2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014, Guilin, China, October 28, 2014 - October 31, 2014
作者:  Chang, Yongwei;  Chen, Da;  Di, Zengfeng;  Zhang, Miao;  Yu, Wenjie
收藏  |  浏览/下载：0/0  |  提交时间：2017/01/20
Kinetic investigation on the confined etching system of n-type gallium arsenide by scanning electrochemical microscopy 期刊论文
http://dx.doi.org/10.1021/jp5056446, 2014
Zhang, Jie; Jia, Jingchun; Han, Lianhuan; Yuan, Ye; Tian, Zhong-Qun; Tian, Zhao-Wu; Zhan, Dongping; 张洁; 田中群; 田昭武; 詹东平
收藏  |  浏览/下载：4/0  |  提交时间：2015/07/22
Study of molecular-beam epitaxy growth on patterned gaas (1 0 0) substrates by masked indium ion implantation 期刊论文
Journal of crystal growth, 2011, 卷号: 318, 期号: 1, 页码: 572-575
作者:  Zhou, Huiying;  Qu, Shengchun;  Jin, Peng;  Xu, Bo;  Ye, Xiaoling
收藏  |  浏览/下载：39/0  |  提交时间：2019/05/12
Influence of growth temperatures on the quality of InGaAs/GaAs quantum well structure grown on Ge substrate by molecular beam epitaxy 期刊论文
journal of semiconductors, 2011, 卷号: 32, 期号: 4, 页码: 43004
He, Jifang; Shang, Xiangjun; Li, Mifeng; Zhu, Yan; Chang, Xiuying; Ni, Haiqiao; Xu, Yingqiang; Niu, Zhichuan
收藏  |  浏览/下载：73/0  |  提交时间：2012/06/14
2-5m InAs/GaSb superlattices infrared photodetector 期刊论文
hongwai yu jiguang gongcheng/infrared and laser engineering, 2011, 卷号: 40, 期号: 8, 页码: 1403-1406
Xu, Yingqiang; Tang, Bao; Wang, Guowei; Ren, Zhengwei; Niu, Zhichuan
收藏  |  浏览/下载：20/0  |  提交时间：2012/06/14

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