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近代物理研究所 [19]

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	Design, Application, and Verification of the Novel SEU Tolerant Abacus-Type Layouts 期刊论文 ELECTRONICS, 2021, 卷号: 10, 期号: 23, 页码: 11 作者: Sun, Yi; Li, Zhi; He, Ze; Chi, Yaqing 收藏 \| 浏览/下载：11/0 \| 提交时间：2022/04/11 D flip-flop double interlocked storage cell single event upset
	Design and verification of multiple SEU mitigated circuits on SRAM-based FPGA system 期刊论文 MICROELECTRONICS RELIABILITY, 2021, 卷号: 126, 页码: 7 作者: Yu, Jian; Cai, Chang; Ning, Bingxu; Gao, Shuai; Liu, Tianqi 收藏 \| 浏览/下载：25/0 \| 提交时间：2022/01/24 Heavy ions Irradiation Hardened Single event upset
	Cold Test of a Superconducting Quadrupole-Sextupole Nested CCT Prototype using matrix harmonic coil 期刊论文 JOURNAL OF INSTRUMENTATION, 2021, 卷号: 16, 期号: 10 作者: Yang, Y. B.; Yang, W. J.; Ou, X. J.; Mei, E. M.; Wu, W. 收藏 \| 浏览/下载：10/0 \| 提交时间：2022/03/01 Acceleration cavities and superconducting magnets (high-temperature, superconductor, radiation hardened magnets, normal-conducting, permanent magnet devices, wigglers and undulators) Instrumentation for heavy-ion accelerators Overall mechanics design (support structures and materials, vibration analysis etc) Data processing methods
	Cold Test of a Superconducting Quadrupole-Sextupole Nested CCT Prototype using matrix harmonic coil 期刊论文 JOURNAL OF INSTRUMENTATION, 2021, 卷号: 16, 期号: 10, 页码: 15 作者: Yang, Y. B.; Yang, W. J.; Ou, X. J.; Mei, E. M.; Wu, W. 收藏 \| 浏览/下载：13/0 \| 提交时间：2022/04/11 Acceleration cavities and superconducting magnets (high-temperature, superconductor, radiation hardened magnets, normal-conducting, permanent magnet devices, wigglers and undulators) Instrumentation for heavy-ion accelerators Overall mechanics design (support structures and materials, vibration analysis etc) Data processing methods
	Mechanism of Ionization Damage in Large Eight-Transistor Complementary Metal-Oxide-Semiconductor Color Image Sensors 期刊论文 JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS, 2021, 卷号: 16, 期号: 11, 页码: 1755-1761 作者: Feng, J (Feng, Jie) [1] , [2]; Fu, J (Fu, Jing) [1] , [2] , [3]; Li, YD (Li, Yu-Dong) [1] , [2]; Wen, L (Wen, Lin) [1] , [2]; Guo, Q (Guo, Qi) [1] , [2] 收藏 \| 浏览/下载：23/0 \| 提交时间：2022/03/24 CMOS Color Image Sensor Ionization Damage Radiation-Sensitive Parameters
	Impact of TID on Within-Wafer Variability of Radiation-Hardened SOI Wafers 期刊论文 IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2021, 卷号: 68, 期号: 7, 页码: 1423-1429 作者: Zheng, QW (Zheng, Qiwen) 1; Cui, JW (Cui, Jiangwei) 1; Yu, XF (Yu, Xuefeng) 1; Li, YD (Li, Yudong) 1; Lu, W (Lu, Wu) 1 收藏 \| 浏览/下载：40/0 \| 提交时间：2021/08/06 Radiation-hardened (RH)silicon-on-insulator (SOI)total ionizing dose (TID)within-wafer variability
	A magnetic field measurement system of superconducting quadrupole for linear accelerator 期刊论文 JOURNAL OF INSTRUMENTATION, 2020, 卷号: 15, 期号: 12, 页码: 15 作者: Yang, W. J.; Ma, L. Z.; Yang, J.; Zhang, M.; Ou, X. J. 收藏 \| 浏览/下载：9/0 \| 提交时间：2021/12/10 Acceleration cavities and superconducting magnets (high-temperature superconductor Accelerator Subsystems and Technologies radiation hardened magnets normal-conducting permanent magnet devices wigglers and undulators)
	TID Response of Bulk Si PMOS FinFETs: Bias, Fin Width, and Orientation Dependence 期刊论文 IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2020, 卷号: 67, 期号: 7, 页码: 1320-1325 作者: Ren, ZX (Ren, Zhexuan)[ 1 ]; An, X (An, Xia)[ 1 ]; Li, GS (Li, Gensong)[ 1 ]; Chen, G (Chen, Gong)[ 1 ]; Li, M (Li, Ming)[ 1 ] 收藏 \| 浏览/下载：35/0 \| 提交时间：2020/09/09 Bulk Si FinFET fin width orientation PMOS threshold voltage shift total ionizing dose (TID)
	Multiple Layout-Hardening Comparison of SEU-Mitigated Filp-Flops in 22-nm UTBB FD-SOI Technology 期刊论文 IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2020, 卷号: 67, 期号: 1, 页码: 374-381 作者: Cai, Chang; Liu, Tianqi; Zhao, Peixiong; Fan, Xue; Huang, Hongyang 收藏 \| 浏览/下载：22/0 \| 提交时间：2022/01/19 D filp-flops (DFFs) heavy ions radiation hardening single-event upsets (SEUs) ultrathin body and buried oxide fully depleted silicon on insulator (UTBB FDSOI)
	SEU tolerance improvement in 22 nm UTBB FDSOI SRAM based on a simple 8T hardened cell 期刊论文 MICROELECTRONICS RELIABILITY, 2019, 卷号: 100, 页码: 6 作者: Cai, C.; Zhao, P. X.; Xu, L. W.; Liu, T. Q.; Li, D. Q. 收藏 \| 浏览/下载：16/0 \| 提交时间：2022/01/19 UTBB FDSOI Radiation hardened 8T SRAM Single event upset

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