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科研机构
半导体研究所 [14]
内容类型
期刊论文 [9]
会议论文 [5]
发表日期
2011 [1]
2008 [1]
2006 [2]
2004 [1]
2002 [4]
2000 [4]
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半导体材料 [14]
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Room-temperature spin photocurrent spectra at interband excitation and comparison with reflectance-difference spectroscopy in InGaAs/AlGaAs quantum wells
期刊论文
journal of applied physics, 2011, 卷号: 109, 期号: 5, 页码: article no.53519
Yu JL
;
Chen YH
;
Jiang CY
;
Liu Y
;
Ma H
收藏
  |  
浏览/下载:36/4
  |  
提交时间:2011/07/05
MOLECULAR-BEAM EPITAXY
INVERSION ASYMMETRY
HETEROSTRUCTURES
SEGREGATION
INTERFACE
Temperature dependence of surface quantum dots grown under frequent growth interruption
期刊论文
physica e-low-dimensional systems & nanostructures, 2008, 卷号: 40, 期号: 3, 页码: 503-506
Yu, LK
;
Xu, B
;
Wang, ZG
;
Jin, P
;
Zhao, C
;
Lei, W
;
Sun, J
;
Hu, LJ
收藏
  |  
浏览/下载:24/1
  |  
提交时间:2010/03/08
growth interruption
in segregation
photoluminescence
molecular beam epitaxy
quantum dots
Evolution of wetting layer in InAs/GaAs quantum dot system
期刊论文
nanoscale research letters, 2006, 卷号: 1, 期号: 1, 页码: 79-83
Chen YH (Chen Y. H.)
;
Ye XL (Ye X. L.)
;
Wang ZG (Wang Z. G.)
收藏
  |  
浏览/下载:59/0
  |  
提交时间:2010/04/11
quantum dots
wetting layer
reflectance difference spectroscopy
segregation
Temperature dependence of surface quantum dots grown under frequent growth interruption
期刊论文
physica e-low-dimensional systems & nanostructures, 2006, 卷号: 33, 期号: 1, 页码: 207-210
作者:
Jin P
;
Xu B
收藏
  |  
浏览/下载:36/0
  |  
提交时间:2010/04/11
growth interruption
in segregation
surface oxide
molecular beam epitaxy
quantum dots
MOLECULAR-BEAM EPITAXY
GAAS
PHOTOLUMINESCENCE
LAYER
SHAPE
SIZE
Investigation of GaAs/AlGaAs interfaces by reflectance-difference spectroscopy
会议论文
10th international conference on defects - recognition, imaging and physics in semiconductors (drip 10), batz sur mer, france, sep 29-oct 02, 2003
作者:
Ye XL
;
Xu B
收藏
  |  
浏览/下载:11/0
  |  
提交时间:2010/10/29
SHORT-PERIOD SUPERLATTICES
RAMAN-SCATTERING
QUANTUM-WELLS
GROWTH
ROUGHNESS
SEGREGATION
ALAS/GAAS
ALAS
GAAS
Detection of indium segregation effects in InGaAs/GaAs quantum wells using reflectance-difference spectrometry
期刊论文
materials science and engineering b-solid state materials for advanced technology, 2002, 卷号: 91, 期号: 0, 页码: 62-65
作者:
Ye XL
;
Xu B
收藏
  |  
浏览/下载:63/4
  |  
提交时间:2010/08/12
reflectance-difference spectroscopy
indium segregation
InGaAs/GaAs quantum wells
EPITAXY-GROWN INGAAS/GAAS
SURFACE SEGREGATION
INTERFACE
Detection of indium segregation effects in InGaAs/GaAs quantum wells using reflectance-difference spectrometry
会议论文
9th international conference on defects: recognition, imaging and physics in semiconductors (drip ix), rimini, italy, sep 24-28, 2001
作者:
Xu B
;
Ye XL
收藏
  |  
浏览/下载:10/0
  |  
提交时间:2010/11/15
reflectance-difference spectroscopy
indium segregation
InGaAs/GaAs quantum wells
EPITAXY-GROWN INGAAS/GAAS
SURFACE SEGREGATION
INTERFACE
Magnetic property and interlayer segregation in spin valve metal multilayers
期刊论文
science in china series e-technological sciences, 2002, 卷号: 45, 期号: 2, 页码: 140-145
Yu GH
;
Li MH
;
Zhu FW
;
Chai CL
;
Jiang HW
;
Lai WY
收藏
  |  
浏览/下载:124/19
  |  
提交时间:2010/08/12
NiFe/FeMn
NiFe/Cu/NiFe/FeMn
interlayer segregation
exchange coupling field H-ex
X-ray photoelectron spectroscopy( XPS)
UNIDIRECTIONAL ANISOTROPY
EXCHANGE BIAS
FILMS
BILAYERS
LAYERS
DEPENDENCE
INTERFACES
FIELD
MODEL
Space-grown SI-GaAs and its application
会议论文
12th international semicoducting and insulating materials conference (simc-xii2002), smolenice, slovakia, jun 30-jul 05, 2002
Chen NF
;
Zhong XG
;
Zhang M
;
Lin LY
收藏
  |  
浏览/下载:14/0
  |  
提交时间:2010/10/29
SEMIINSULATING GALLIUM-ARSENIDE
FLOATING-ZONE GROWTH
CRYSTAL-GROWTH
ZERO GRAVITY
MICROGRAVITY
SEGREGATION
STOICHIOMETRY
SILICON
DEFECTS
INSB
Influence of phosphine flow rate on Si growth rate in gas source molecular beam epitaxy
期刊论文
journal of crystal growth, 2000, 卷号: 220, 期号: 4, 页码: 461-465
Gao F
;
Huang DD
;
Li JP
;
Lin YX
;
Kong MY
;
Sun DZ
;
Li JM
;
Lin LY
收藏
  |  
浏览/下载:38/0
  |  
提交时间:2010/08/12
Si growth rate
P doping
PH3 flow rate
P segregation
GSMBE
CHEMICAL-VAPOR-DEPOSITION
SI1-XGEX
PHOSPHORUS
SI2H6
DISILANE
SI(100)
MBE
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