Space-grown SI-GaAs and its application

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	Space-grown SI-GaAs and its application
	Chen NF ; Zhong XG ; Zhang M ; Lin LY
	2002
会议名称	12th international semicoducting and insulating materials conference (simc-xii2002)
会议日期	jun 30-jul 05, 2002
会议地点	smolenice, slovakia
关键词	SEMIINSULATING GALLIUM-ARSENIDE FLOATING-ZONE GROWTH CRYSTAL-GROWTH ZERO GRAVITY MICROGRAVITY SEGREGATION STOICHIOMETRY SILICON DEFECTS INSB
页码	3-8
通讯作者	chen nf chinese acad sci inst semicond lab semicond mat sci pob 912 beijing 100083 peoples r china.
中文摘要	a semi-insulating gaas single crystal ingot was grown in a recoverable satellite, within a specially designed pyrolytic boron nitride crucible, in a power-travelling furnace under microgravity. the crystal was characterized systematically and was used in fabricating low noise field effect transistors and analogue switch integrated circuits by the direct ion-implantation technique. all key electrical properties of these transistors and integrated circuits have surpassed those made from conventional earth-grown gallium arsenide. this result shows that device-grade space-grown semiconducting single. crystal has surpassed the best. terrestrial counterparts. studies on the correlation between si-gaas wafers and the electronic devices and integrated circuits indicate that the characteristics of a compound semiconductor single crystal depends fundamentally on its stoichiometry.
英文摘要	a semi-insulating gaas single crystal ingot was grown in a recoverable satellite, within a specially designed pyrolytic boron nitride crucible, in a power-travelling furnace under microgravity. the crystal was characterized systematically and was used in fabricating low noise field effect transistors and analogue switch integrated circuits by the direct ion-implantation technique. all key electrical properties of these transistors and integrated circuits have surpassed those made from conventional earth-grown gallium arsenide. this result shows that device-grade space-grown semiconducting single. crystal has surpassed the best. terrestrial counterparts. studies on the correlation between si-gaas wafers and the electronic devices and integrated circuits indicate that the characteristics of a compound semiconductor single crystal depends fundamentally on its stoichiometry.; 于2010-10-29批量导入; made available in dspace on 2010-10-29t06:36:29z (gmt). no. of bitstreams: 1 2806.pdf: 245729 bytes, checksum: 650eef0b8c922f683e423ead8d1f3035 (md5) previous issue date: 2002; iee.; slovak acad sci.; ieee elect devices soc.; cmk ltd.; engn control syst.; chinese acad sci, inst semicond, lab semicond mat sci, beijing 100083, peoples r china
收录类别	CPCI-S
会议主办者	iee.; slovak acad sci.; ieee elect devices soc.; cmk ltd.; engn control syst.
会议录	2002 12th international conference on semiconducting & insulating materials
会议录出版者	ieee ; 345 e 47th st, new york, ny 10017 usa
会议录出版地	345 e 47th st, new york, ny 10017 usa
学科主题	半导体材料
语种	英语
ISBN号	0-7803-7418-5
内容类型	会议论文
源URL	[http://ir.semi.ac.cn/handle/172111/13633]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Chen NF,Zhong XG,Zhang M,et al. Space-grown SI-GaAs and its application[C]. 见:12th international semicoducting and insulating materials conference (simc-xii2002). smolenice, slovakia. jun 30-jul 05, 2002.