Evolution of wetting layer in InAs/GaAs quantum dot system

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	Evolution of wetting layer in InAs/GaAs quantum dot system
	Chen YH (Chen Y. H.) ; Ye XL (Ye X. L.) ; Wang ZG (Wang Z. G.)
刊名	nanoscale research letters
	2006
卷号	1 期号:1 页码:79-83
关键词	quantum dots wetting layer reflectance difference spectroscopy segregation
ISSN号	1931-7573
通讯作者	chen, yh, chinese acad sci, inst semicond, key lab semicond mat sci, pob 912, beijing 100083, peoples r china. e-mail: yhchen@red.semi.ac.cn
中文摘要	for inas/gaas quantum dot system, the evolution of the wetting layer (wl) with the inas deposition thickness has been studied by reflectance difference spectroscopy (rds). two transitions related to the heavy-and light-hole in the wl have been distinguished in rd spectra. taking into account the strain and segregation effects, a model has been presented to deduce the inas amount in the wl and the segregation coefficient of the indium atoms from the transition energies of heavy-and light-holes. the variation of the inas amount in the wl and the segregation coefficient are found to rely closely on the growth modes. in addition, the huge dots also exhibits a strong effect on the evolution of the wl. the observed linear dependence of in segregation coefficient upon the inas amount in the wl demonstrates that the segregation is enhanced by the strain in the wl.
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2010-04-11
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/10230]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Chen YH ,Ye XL ,Wang ZG . Evolution of wetting layer in InAs/GaAs quantum dot system[J]. nanoscale research letters,2006,1(1):79-83.
APA	Chen YH ,Ye XL ,&Wang ZG .(2006).Evolution of wetting layer in InAs/GaAs quantum dot system.nanoscale research letters,1(1),79-83.
MLA	Chen YH ,et al."Evolution of wetting layer in InAs/GaAs quantum dot system".nanoscale research letters 1.1(2006):79-83.