Temperature dependence of surface quantum dots grown under frequent growth interruption

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	Temperature dependence of surface quantum dots grown under frequent growth interruption
	Yu, LK ; Xu, B ; Wang, ZG ; Jin, P ; Zhao, C ; Lei, W ; Sun, J ; Hu, LJ
刊名	physica e-low-dimensional systems & nanostructures
	2008
卷号	40 期号:3 页码:503-506
关键词	growth interruption in segregation photoluminescence molecular beam epitaxy quantum dots
ISSN号	1386-9477
通讯作者	yu, lk, chinese acad sci, inst semicond, key lab semicond mat sci, po box 912, beijing 100083, peoples r china. 电子邮箱地址: yulike@rcd.semi.ac.cn
中文摘要	we grow in-gaas quantum dot (qd) at low growth rate with 70 times insertion of growth interruption in mbe system. it is found that because of the extreme growth condition, qds exhibit a thick wetting layer, large qd height value and special surface morphology which is attributed to the in segregation effect. temperature dependence of photoluminescence measurement shows that this kind of qds has a good thermal stability which is explained in terms of a "group coupling" model put forward by us. (c) 2007 elsevier b.v. all rights reserved.
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2010-03-08
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/6870]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Yu, LK,Xu, B,Wang, ZG,et al. Temperature dependence of surface quantum dots grown under frequent growth interruption[J]. physica e-low-dimensional systems & nanostructures,2008,40(3):503-506.
APA	Yu, LK.,Xu, B.,Wang, ZG.,Jin, P.,Zhao, C.,...&Hu, LJ.(2008).Temperature dependence of surface quantum dots grown under frequent growth interruption.physica e-low-dimensional systems & nanostructures,40(3),503-506.
MLA	Yu, LK,et al."Temperature dependence of surface quantum dots grown under frequent growth interruption".physica e-low-dimensional systems & nanostructures 40.3(2008):503-506.