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Effect of gas pressure on the properties of silicon thin film 期刊论文
gongneng cailiao/journal of functional materials, 2011, 卷号: 42, 期号: 8, 页码: 1489-1491
Hao, Hui-Ying; Li, Wei-Min; Zeng, Xiang-Bo; Kong, Guang-Lin; Liao, Xian-Bo
收藏  |  浏览/下载：44/0  |  提交时间：2012/06/14
MOCVD growth of a-plane InN films on r-Al2O3 with different buffer layers 期刊论文
journal of crystal growth, 2011, 卷号: 319, 期号: 1, 页码: 114-117
作者:  Jia CH;  Song HP
收藏  |  浏览/下载：118/2  |  提交时间：2011/07/05
Optimization of double nanocrystalline silicon p-layers for amorphous silicon solar cells 期刊论文
cailiao gongcheng/journal of materials engineering, 2011, 期号: 8, 页码: 5-7+13
Liu, Shi-Yong; Zeng, Xiang-Bo; Peng, Wen-Bo; Yao, Wen-Jie; Xie, Xiao-Bing; Yang, Ping; Wang, Chao; Wang, Zhan-Guo
收藏  |  浏览/下载：32/0  |  提交时间：2012/06/14
Defect-related emission characteristics of nonpolar m-plane GaN revealed by selective etching 期刊论文
journal of crystal growth, 2011, 卷号: 314, 期号: 1, 页码: 141-145
作者:  Duan RF
收藏  |  浏览/下载：80/4  |  提交时间：2011/07/05
Valence band offset of GaN/diamond heterojunction measured by X-ray photoelectron spectroscopy 期刊论文
applied surface science, 2011, 卷号: 257, 期号: 18, 页码: 8110-8112
作者:  Shi K;  Jiao CM;  Song HP
收藏  |  浏览/下载：94/7  |  提交时间：2011/07/05
The effect of different oriented sapphire substrates on the growth of polar and non-polar ZnMgO by MOCVD 期刊论文
journal of crystal growth, 2011, 卷号: 314, 期号: 1, 页码: 39-42
作者:  Song HP;  Shi K;  Sang L;  Wei HY
收藏  |  浏览/下载：58/3  |  提交时间：2011/07/05
Growth Simulations of Self-Assembled Nanowires on Stepped Substrates 期刊论文
ieee journal of selected topics in quantum electronics, 2011, 卷号: 17, 期号: 4, 页码: 960-965
Liang S; Kong DH; Zhu HL; Wang W
收藏  |  浏览/下载：26/0  |  提交时间：2012/02/06
Wurtzite to zincblende transition of InN films on(011) SrTiO3 by decreasing trimethylindium flows 期刊论文
applied physics a: materials science and processing, 2011, 页码: 1-5
Jia, C.H.; Chen, Y.H.; Zhang, B.; Liu, X.L.; Yang, S.Y.; Zhang, W.F.; Wang, Z.G.
收藏  |  浏览/下载：20/0  |  提交时间：2012/06/14
Well-aligned Zn-doped tilted InN nanorods grown on r-plane sapphire by MOCVD 期刊论文
nanotechnology, 2011, 卷号: 22, 期号: 23, 页码: article no.235603
作者:  Song HP
收藏  |  浏览/下载：69/3  |  提交时间：2011/07/05
GaN grown with InGaN as a weakly bonded layer 期刊论文
crystengcomm, 2011, 卷号: 13, 期号: 5, 页码: 1580-1585
作者:  Wei HY;  Song HP
收藏  |  浏览/下载：63/4  |  提交时间：2011/07/05

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