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A practical route towards fabricating GaN nanowire arrays 期刊论文
crystengcomm, 2011, 卷号: 13, 期号: 19, 页码: 5929-5935
Liu, JQ; Huang, J; Gong, XJ; Wang, JF; Xu, K; Qiu, YX; Cai, DM; Zhou, TF; Ren, GQ; Yang, H
收藏  |  浏览/下载：26/0  |  提交时间：2012/02/06
Effect of high temperature AlGaN buffer thickness on GaN Epilayer grown on Si(111) substrates 期刊论文
journal of materials science-materials in electronics, 2011, 卷号: 22, 期号: 8, 页码: 1028-1032
作者:  Pan X
收藏  |  浏览/下载：20/0  |  提交时间：2011/09/14
Behavior of pentacene initial nucleation on various dielectrics and its effect on carrier transport in organic field-effect transistor 期刊论文
Journal of nanoscience and nanotechnology, 2010, 卷号: 10, 期号: 11, 页码: 7103-7107
作者:  Qi, Qiong;  Yu, Aifang;  Wang, Liangmin;  Jiang, Chao
收藏  |  浏览/下载：15/0  |  提交时间：2019/05/12
Surface roughness scattering in two dimensional electron gas channel 期刊论文
applied physics letters, 2010, 卷号: 97, 期号: 26, 页码: article no.262111
Liu B; Lu YW; Jin GR; Zhao Y; Wang XL; Zhu QS; Wang ZG
收藏  |  浏览/下载：48/5  |  提交时间：2011/07/05
Formation trends of ordered self-assembled nanoislands on stepped substrates 期刊论文
journal of applied physics, 2010, 卷号: 108, 期号: 7, 页码: art. no. 073512
Liang S (Liang S.); Zhu HL (Zhu H. L.); Kong DH (Kong D. H.); Wang W (Wang W.)
收藏  |  浏览/下载：12/0  |  提交时间：2010/11/14
Resonant subband Landau level coupling in symmetric quantum well 期刊论文
journal of applied physics, 2010, 卷号: 108, 期号: 8, 页码: art. no. 083502
Tung LC (Tung L. -C.); Wu XG (Wu X. -G.); Pfeiffer LN (Pfeiffer L. N.); West KW (West K. W.); Wang YJ (Wang Y. -J.)
收藏  |  浏览/下载：29/0  |  提交时间：2010/12/05
Behavior of Pentacene Initial Nucleation on Various Dielectrics and Its Effect on Carrier Transport in Organic Field-Effect Transistor 期刊论文
journal of nanoscience and nanotechnology, 2010, 卷号: 10, 期号: 11 sp. iss. si, 页码: 7103-7107
Qi QO (Qi Qiong); Yu AF (Yu Aifang); Wang LM (Wang Liangmin); Jiang C (Jiang Chao)
收藏  |  浏览/下载：28/0  |  提交时间：2010/11/30
An internally-matched gan hemts device with 45.2 w at 8 ghz for x-band application 期刊论文
Solid-state electronics, 2009, 卷号: 53, 期号: 3, 页码: 332-335
作者:  Wang, X. L.;  Chen, T. S.;  Xiao, H. L.;  Tang, J.;  Ran, J. X.
收藏  |  浏览/下载：22/0  |  提交时间：2019/05/12
Enhancement of conductivity and transmittance of ZnO films by post hydrogen plasma treatment 期刊论文
journal of applied physics, 2009, 卷号: 105, 期号: 8, 页码: art. no. 083713
作者:  Zhang XW;  You JB;  Yin ZG
收藏  |  浏览/下载：70/1  |  提交时间：2010/03/08
Properties of AlyGa1-yN/AlxGa1-xN/AlN/GaN Double-Barrier High Electron Mobility Transistor Structure 期刊论文
chinese physics letters, 2009, 卷号: 26, 期号: 1, 页码: art. no. 017301
Guo LC; Wang XL; Xiao HL; Ran JX; Wang CM; Ma ZY; Luo WJ; Wang ZG
收藏  |  浏览/下载：193/43  |  提交时间：2010/03/08

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