Properties of AlyGa1-yN/AlxGa1-xN/AlN/GaN Double-Barrier High Electron Mobility Transistor Structure

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	Properties of AlyGa1-yN/AlxGa1-xN/AlN/GaN Double-Barrier High Electron Mobility Transistor Structure
	Guo LC ; Wang XL ; Xiao HL ; Ran JX ; Wang CM ; Ma ZY ; Luo WJ ; Wang ZG
刊名	chinese physics letters
	2009
卷号	26 期号:1 页码:art. no. 017301
关键词	CONTENT ALGAN/GAN HETEROSTRUCTURES CHEMICAL-VAPOR-DEPOSITION FIELD-EFFECT TRANSISTORS AL-CONTENT ALGAN/ALN/GAN HETEROSTRUCTURES HEMT STRUCTURES PHASE EPITAXY SAPPHIRE GAS DENSITIES
ISSN号	0256-307x
通讯作者	guo lc chinese acad sci inst semicond key lab semicond mat sci beijing 100083 peoples r china. e-mail address: lcguo@semi.ac.cn
中文摘要	electrical properties of alyga1-yn/alxga1-xn/aln/gan structure are investigated by solving coupled schrodinger and poisson equation self-consistently. our calculations show that the two-dimensional electron gas (2deg) density will decrease with the thickness of the second barrier (alyga1-yn) once the aln content of the second barrier is smaller than a critical value y(c), and will increase with the thickness of the second barrier (alyga1-yn) when the critical aln content of the second barrier y(c) is exceeded. our calculations also show that the critical aln content of the second barrier y(c) will increase with the aln content and the thickness of the first barrier layer (alxga1-xn).
学科主题	半导体物理
收录类别	SCI
资助信息	knowledge innovation project of chinese academy of sciences yyyj-0701-02 national natural sciences foundation of china 60576046 60606002national basic research programme of china 2002cb311903 2006cb604905 513270605supported by the knowledge innovation project of chinese academy of sciences under gant no yyyj-0701-02, the national natural sciences foundation of china under gant nos 60576046 and 60606002, and the national basic research programme of china under gant nos 2002cb311903, 2006cb604905 and 513270605.
语种	英语
公开日期	2010-03-08
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/7387]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Guo LC,Wang XL,Xiao HL,et al. Properties of AlyGa1-yN/AlxGa1-xN/AlN/GaN Double-Barrier High Electron Mobility Transistor Structure[J]. chinese physics letters,2009,26(1):art. no. 017301.
APA	Guo LC.,Wang XL.,Xiao HL.,Ran JX.,Wang CM.,...&Wang ZG.(2009).Properties of AlyGa1-yN/AlxGa1-xN/AlN/GaN Double-Barrier High Electron Mobility Transistor Structure.chinese physics letters,26(1),art. no. 017301.
MLA	Guo LC,et al."Properties of AlyGa1-yN/AlxGa1-xN/AlN/GaN Double-Barrier High Electron Mobility Transistor Structure".chinese physics letters 26.1(2009):art. no. 017301.