An internally-matched gan hemts device with 45.2 w at 8 ghz for x-band application | |
Wang, X. L.1,2; Chen, T. S.3; Xiao, H. L.1,2; Tang, J.1,2; Ran, J. X.1,2; Zhang, M. L.1,2; Feng, C.1,2; Hou, Q. F.1,2; Wei, M.1,2; Jiang, L. J.1,2 | |
刊名 | Solid-state electronics |
2009-03-01 | |
卷号 | 53期号:3页码:332-335 |
关键词 | Algan/aln/gan Hemt Mocvd Sic substrate Power device |
ISSN号 | 0038-1101 |
DOI | 10.1016/j.sse.2009.01.003 |
通讯作者 | Wang, x. l.(xlwang@semi.ac.cn) |
英文摘要 | Optimized algan/aln/gan high electron mobility transistor (hemt) with high mobility gan channel layer structures were grown on 2-in. diameter semi-insulating 6h-sic substrates by mocvd. the 2-in. diameter gan hemt wafer exhibited a low average sheet resistance of 261.9 omega/square, with the resistance un-uniformity as low as 2.23%. atomic force microscopy measurements revealed a smooth algan surface whose root-mean-square roughness is 0.281 nm for a scan area of 5 x 5 mu m. for the single-cell hemts device of 2.5-mm gate width fabricated using the materials, a maximum drain current density of 1.31 a/mm, an extrinsic transconductance of 450 ms/mm, a current gain cutoff frequency of 24 ghz and a maximum frequency of oscillation 54 ghz were achieved. the four-cell internally-matched gan hemts device with 10-mm total gate width demonstrated a very high output power of 45.2 w at 8 ghz under the condition of continuous-wave (cw), with a power added efficiency of 32.0% and power gain of 6.2 db. to our best knowledge, the achieved output power of internally-matched devices are the state-of-the-art result ever reported for x-band gan-based hemts. crown copyright (c) 2009 published by elsevier ltd. all rights reserved. |
WOS关键词 | PERFORMANCE ; MOBILITY ; MOCVD ; POWER ; OPTIMIZATION ; EPITAXY |
WOS研究方向 | Engineering ; Physics |
WOS类目 | Engineering, Electrical & Electronic ; Physics, Applied ; Physics, Condensed Matter |
语种 | 英语 |
出版者 | PERGAMON-ELSEVIER SCIENCE LTD |
WOS记录号 | WOS:000264731300015 |
内容类型 | 期刊论文 |
URI标识 | http://www.corc.org.cn/handle/1471x/2427607 |
专题 | 半导体研究所 |
通讯作者 | Wang, X. L. |
作者单位 | 1.Chinese Acad Sci, Ctr Mat Sci, Inst Semicond, Beijing 100083, Peoples R China 2.Chinese Acad Sci, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China 3.Nanjing Electron Devices Inst, Nanjing 210016, Peoples R China |
推荐引用方式 GB/T 7714 | Wang, X. L.,Chen, T. S.,Xiao, H. L.,et al. An internally-matched gan hemts device with 45.2 w at 8 ghz for x-band application[J]. Solid-state electronics,2009,53(3):332-335. |
APA | Wang, X. L..,Chen, T. S..,Xiao, H. L..,Tang, J..,Ran, J. X..,...&Wang, Z. G..(2009).An internally-matched gan hemts device with 45.2 w at 8 ghz for x-band application.Solid-state electronics,53(3),332-335. |
MLA | Wang, X. L.,et al."An internally-matched gan hemts device with 45.2 w at 8 ghz for x-band application".Solid-state electronics 53.3(2009):332-335. |
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