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科研机构
北京大学 [37]
厦门大学 [1]
内容类型
其他 [38]
发表日期
2016 [4]
2015 [1]
2014 [5]
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Physical Understanding and Optimization of Resistive Switching Characteristics in Oxide-RRAM
其他
2016-01-01
Kang, J. F.
;
Huang, P.
;
Chen, Z.
;
Zhao, Y. D.
;
Liu, C.
;
Han, R. Z.
;
Liu, L. F.
;
Liu, X. Y.
;
Wang, Y. Y.
;
Gao, B.
收藏
  |  
浏览/下载:3/0
  |  
提交时间:2017/12/03
Resistive random access memory (RRAM)
switching mechanism
physical-based model
resistive switching
reliability
optimization design
MODEL
MEMORY
OPERATIONS
MECHANISM
A Physics-Based Compact Model for Material- and Operation-Oriented Switching Behaviors of CBRAM
其他
2016-01-01
Zhao, Y. D.
;
Hu, J. J.
;
Huang, P.
;
Yuan, F.
;
Chai, Y.
;
Liu, X. Y.
;
Kang, J. F.
收藏
  |  
浏览/下载:3/0
  |  
提交时间:2017/12/03
MEMORY
OXIDE
A 7.9 fJ/conversion-step 10-bit 125 MS/s SAR ADC with Simplified Power-efficient Digital Control Logic
其他
2016-01-01
Mingxiao He
;
Fan Yang
;
Xiucheng Hao
;
Le Ye
;
Huailin Liao
收藏
  |  
浏览/下载:3/0
  |  
提交时间:2017/12/03
capacitor
consuming
switching
converter
sandwich
figure
analog
monotonic
prototype
successive
capacitor
consuming
switching
converter
sandwich
figure
analog
monotonic
prototype
successive
On the Frequency Dependence of Oxide Trap Coupling in Nanoscale MOSFETs: Understanding based on Complete 4-State Trap Model
其他
2016-01-01
Peng Hao
;
Dongyuan Mao
;
Runsheng Wang
;
Shaofeng Guo
;
Pengpeng Ren
;
Ru Huang
收藏
  |  
浏览/下载:4/0
  |  
提交时间:2017/12/03
Trap
explanation
interpretation
verified
switching
discharged
thoroughly
capture
tendency
metastable
Trap
explanation
interpretation
verified
switching
discharged
thoroughly
capture
tendency
metastable
Influence of nitrogen buffering on oxygen in indium-tin-oxide capped resistive random access memory with NH3 treatment
其他
2015-01-01
Chen, Ji
;
Lou, Jen-Chung
;
Chang, Kuan-Chang
;
Chang, Ting-Chang
;
Tsai, Tsung-Ming
;
Pan, Chih-Hung
收藏
  |  
浏览/下载:5/0
  |  
提交时间:2017/12/03
Improved performance of TiN/HfO2/Pt resistive switching device by modifying TiN top electrode crystal orientation
其他
2014-01-01
Hou, Y.
;
Liu, R.
;
Zhang, W.B.
;
Liu, L.F.
;
Chen, B.
;
Zhang, F.F.
;
Han, D.D.
;
Kang, J.F.
;
Cheng, Y.H.
收藏
  |  
浏览/下载:7/0
  |  
提交时间:2015/11/10
Scaling and Operation Characteristics of HfOx Based Vertical RRAM for 3D Cross-Point Architecture
其他
2014-01-01
Kang, J. F.
;
Gao, B.
;
Chen, B.
;
Huang, P.
;
Zhang, F. F.
;
Liu, X. Y.
;
Chen, H-Y.
;
Jiang, Z.
;
Wong, H.S. Philip
收藏
  |  
浏览/下载:3/0
  |  
提交时间:2015/11/13
3D cross-point integration
vertical RRAM
scaling characteristics
Resistive Switching in Organic Memory Devices for Flexible Applications
其他
2014-01-01
Huang, Ru
;
Cai, Yimao
;
Liu, Yefan
;
Bai, Wenliang
;
Kuang, Yongbian
;
Wang, Yangyuan
收藏
  |  
浏览/下载:2/0
  |  
提交时间:2015/11/13
resistance memor
flexible
organic
parylene-C
NONVOLATILE MEMORY
BLOCK-COPOLYMERS
DONOR
Formation energy study of oxygen vacancies in undoped, aluminum-doped and nitrogen-doped TaOx-based RRAM by first principle simulation
其他
2014-01-01
Deng, Haopei
;
Cai, Yimao
;
Yu, Muxi
;
Huang, Ru
收藏
  |  
浏览/下载:3/0
  |  
提交时间:2015/11/13
Scaling and operation characteristics of HfOx based vertical RRAM for 3D cross-point architecture
其他
2014-01-01
Kang, J.F.
;
Gao, B.
;
Chen, B.
;
Huang, P.
;
Zhang, F.F.
;
Liu, X.Y.
;
Chen, H.-Y.
;
Jiang, Z.
;
Wong, H.-S. Philip
;
Yu, Shimeng
收藏
  |  
浏览/下载:4/0
  |  
提交时间:2015/11/13
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