QQ客服 官方微博 反馈留言

	Improved performance of TiN/HfO2/Pt resistive switching device by modifying TiN top electrode crystal orientation
	Hou, Y. ; Liu, R. ; Zhang, W.B. ; Liu, L.F. ; Chen, B. ; Zhang, F.F. ; Han, D.D. ; Kang, J.F. ; Cheng, Y.H.
	2014
英文摘要	TiN/HfO2/Pt resistive switching (RS) devices were fabricated with TiN top electrodes deposited in various Ar:N2 ambient. Strong relevance between ambient Ar:N2 ratio and electrical performance was demonstrated. This correlation was attributed to the difference in TiN crystal orientation, which has strong dependence on and can be controlled by ambient Ar:N2 ratio during deposition. Electrical measurement results suggest that (200) crystal orientation of TiN contributes to stronger oxygen reservoir ability, meanwhile the capability of (111) orientation is likely to be weaker. Modifying TiN top electrode oxygen storage ability by controllable crystal orientation helps realize stable and uniform resistive switching devices. ? 2014 IEEE.; EI; 0
语种	英语
DOI标识	10.1109/EDSSC.2014.7061217
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/153573]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Hou, Y.,Liu, R.,Zhang, W.B.,et al. Improved performance of TiN/HfO2/Pt resistive switching device by modifying TiN top electrode crystal orientation. 2014-01-01.

个性服务

查看访问统计

相关权益政策

暂无数据

收藏/分享

除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。