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	A Physics-Based Compact Model for Material- and Operation-Oriented Switching Behaviors of CBRAM
	Zhao, Y. D. ; Hu, J. J. ; Huang, P. ; Yuan, F. ; Chai, Y. ; Liu, X. Y. ; Kang, J. F.
	2016
关键词	MEMORY OXIDE
英文摘要	A physics-based compact model is developed to capture the essential resistive switching behaviors of conductive-bridge random access memory (CBRAM) under DC and AC operations. Three types of evolution modes of conductive filament correlated with material properties and operation schemes are modeled based on experimental observations. By modeling the temperature and electric-field effects as well as the electrical conduction, the model can well reproduce the DC and AC switching characteristics in different material stacks and operation modes. The calibrated model can be further implemented into SPICE to evaluate and optimize the array performance of CBRAM as a device circuit-system co-design tool.; NSFC [61334007, 61421005]; Beijing Municipal Science and Technology Plan Projects; CPCI-S(ISTP)
语种	英语
出处	62nd Annual IEEE International Electron Devices Meeting (IEDM)
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/470262]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Zhao, Y. D.,Hu, J. J.,Huang, P.,et al. A Physics-Based Compact Model for Material- and Operation-Oriented Switching Behaviors of CBRAM. 2016-01-01.

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