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Role of edge dislocation and Si impurity in linking the blue luminescence and yellow luminescence in n-type GaN films 期刊论文
applied physics letters, 2009, 卷号: 95, 期号: 4, 页码: art. no. 041901
作者:  Yang H;  Wang H;  Wang H;  Wang YT;  Yang H
收藏  |  浏览/下载：64/1  |  提交时间：2010/03/08
The effect of low temperature AlN interlayers on the growth of GaN epilayer on Si (111) by MOCVD 期刊论文
superlattices and microstructures, 2008, 卷号: 44, 期号: 2, 页码: 153-159
Luo, WJ; Wang, XL; Guo, LC; Xiao, HL; Wang, CM; Ran, JX; Li, JP; Li, JM
收藏  |  浏览/下载：83/1  |  提交时间：2010/03/08
Interface effect on emission properties of Er-doped Si nanoclusters embedded in SiO2 prepared by magnetron sputtering 期刊论文
journal of applied physics, 2006, 卷号: 99, 期号: 9, 页码: art.no.094302
作者:  Jiang DS
收藏  |  浏览/下载：36/0  |  提交时间：2010/04/11
Photoluminescence of nanocrystalline SiC films prepared by rf magnetron sputtering 期刊论文
chinese physics, 2001, 卷号: 10, 期号: suppl.s., 页码: s36-s39
Liu JW; Xie FQ; Zhong DY; Wang EG; Liu WX; Li SF; Yang H
收藏  |  浏览/下载：89/7  |  提交时间：2010/08/12
Increasing the photoluminescence intensity of Ge islands by chemical etching 期刊论文
chinese physics, 2001, 卷号: 10, 期号: 10, 页码: 966-969
Gao F; Huang CJ; Huang DD; Li JP; Kong MY; Zeng YP; Li JM; Lin LY
收藏  |  浏览/下载：108/9  |  提交时间：2010/08/12
Indium-doping enhanced two-dimensional-electron-gas performance in AlGaN/GaN heterostructures 会议论文
international workshop on nitride semiconductors (iwn 2000), nagoya, japan, sep 24-27, 2000
作者:  Han PD
收藏  |  浏览/下载：16/0  |  提交时间：2010/10/29
Strain effect on the band structure of InAs/GaAs quantum dots 期刊论文
japanese journal of applied physics part 1-regular papers short notes & review papers, 1999, 卷号: 38, 期号: 11, 页码: 6264-6265
作者:  Wang HL;  Jiang DS;  Wang HL;  Wang HL
收藏  |  浏览/下载：47/0  |  提交时间：2010/08/12

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