Strain effect on the band structure of InAs/GaAs quantum dots

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	Strain effect on the band structure of InAs/GaAs quantum dots
	Wang HL; Jiang DS; Wang HL; Wang HL
刊名	japanese journal of applied physics part 1-regular papers short notes & review papers
	1999
卷号	38 期号:11 页码:6264-6265
关键词	InAs/GaAs quantum dots photoluminescence band structure relaxation GAAS TEMPERATURE
ISSN号	0021-4922
通讯作者	zhu hj,chinese acad sci,inst semicond,natl lab superlattices & microstruct,pob 912,beijing 100083,peoples r china.
中文摘要	the strain effect on the band structure of inas/gaas quantum dots has been investigated. 1 mu m thick ingaas cap layer was added onto the inas quantum dot layer to modify the strain in the quantum dots. the exciton energies of inas quantum dots before and after the relaxation of the cap layer were determined by photoluminescence. when the epilayer was lifted off from the substrate by etching away the sacrifice layer (alas) by hf solution, the energy of exciton in the quantum dots decreases due to band gap narrowing resulted from the strain relaxation. this method can be used to obtain much longer emission wavelength from inas quantum dots.
学科主题	半导体物理
收录类别	SCI
语种	英语
公开日期	2010-08-12
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/12754]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Wang HL,Jiang DS,Wang HL,et al. Strain effect on the band structure of InAs/GaAs quantum dots[J]. japanese journal of applied physics part 1-regular papers short notes & review papers,1999,38(11):6264-6265.
APA	Wang HL,Jiang DS,Wang HL,&Wang HL.(1999).Strain effect on the band structure of InAs/GaAs quantum dots.japanese journal of applied physics part 1-regular papers short notes & review papers,38(11),6264-6265.
MLA	Wang HL,et al."Strain effect on the band structure of InAs/GaAs quantum dots".japanese journal of applied physics part 1-regular papers short notes & review papers 38.11(1999):6264-6265.