Indium-doping enhanced two-dimensional-electron-gas performance in AlGaN/GaN heterostructures | |
Han PD | |
2000 | |
会议名称 | international workshop on nitride semiconductors (iwn 2000) |
会议日期 | sep 24-27, 2000 |
会议地点 | nagoya, japan |
关键词 | AlGaN/GaN heterostructures In-doping 2DEG electron sheet density X-ray diffraction etching CHEMICAL-VAPOR-DEPOSITION MOLECULAR-BEAM EPITAXY PHASE EPITAXY MOBILITY GROWTH FILMS |
页码 | 923-926 |
通讯作者 | lu dc chinese acad sci inst semicond lab semicond mat sci pob 912 beijing 100083 peoples r china. |
中文摘要 | indium (in)-doping was applied in gan layers during growth of algan/gan heterostructure with unintentionally doped or modulation si-doped algan layers. it was found that in-doping was effective in improving electron sheet density of two-dimensional-electron-gas (2deg) in the heterostructures. furthermore, in-doping also improved mobility in heterostructures with si modulation-doped in algan layers. the possible reasons were discussed. x-ray diffraction (xrd) and wet chemical etching revealed that crystalline quality of gan was improved by in-doping. it was proposed that in-doping modified growth kinetics of gan. |
收录类别 | CPCI-S |
会议主办者 | japan soc appl phys, solid state phys & applicat div.; japan soc promot sci, comm short wavelength optoelectr devices, 162.; japan soc promot sci, comm convers light & elect, 125. |
会议录 | proceedings of the international workshop on nitride semiconductors, 1 |
会议录出版者 | inst pure applied physics ; daini toyokaiji bldg 24-8 shinbashi 4 chome, tokyo, 105-0004, japan |
会议录出版地 | daini toyokaiji bldg 24-8 shinbashi 4 chome, tokyo, 105-0004, japan |
学科主题 | 半导体物理 |
语种 | 英语 |
ISBN号 | 4-900526-13-4 |
内容类型 | 会议论文 |
源URL | [http://ir.semi.ac.cn/handle/172111/13745] |
专题 | 半导体研究所_中国科学院半导体研究所(2009年前) |
推荐引用方式 GB/T 7714 | Han PD. Indium-doping enhanced two-dimensional-electron-gas performance in AlGaN/GaN heterostructures[C]. 见:international workshop on nitride semiconductors (iwn 2000). nagoya, japan. sep 24-27, 2000. |
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