Interface effect on emission properties of Er-doped Si nanoclusters embedded in SiO2 prepared by magnetron sputtering

CORC > 半导体研究所 > 中国科学院半导体研究所 > 中国科学院半导体研究所（2009年前）

	Interface effect on emission properties of Er-doped Si nanoclusters embedded in SiO2 prepared by magnetron sputtering
	Jiang DS
刊名	journal of applied physics
	2006
卷号	99 期号:9 页码:art.no.094302
关键词	ROOM-TEMPERATURE SILICON SEMICONDUCTORS DISLOCATIONS SPECTRA
ISSN号	0021-8979
通讯作者	bian, lf, chinese acad sci, inst semicond, state key lab surface phys, beijing 100083, peoples r china. e-mail: guobian@semi.ac.cn
中文摘要	er-doped si nanoclusters embedded in sio2 (ncso) films were prepared by radio frequency magnetron sputtering on either silicon or quartz substrates. a 1.16 mu m (1.08 ev) photoluminescence (pl) peak was observed from an er-doped ncso film deposited on a si substrate. this 1.16 mu m peak is attributed to misfit dislocations at the ncso/si interface. the emission properties of the 1.16 mu m peak and its correlation with the er3+ emission (1.54 mu m) have been studied in detail. the observed behavior suggests that the excitation mechanism of the 1.16 mu m pl is in a fashion similar to that shown for er-doped si nanoclusters embedded in a sio2 matrix. (c) 2006 american institute of physics.
学科主题	半导体物理
收录类别	SCI
语种	英语
公开日期	2010-04-11
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/10660]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Jiang DS. Interface effect on emission properties of Er-doped Si nanoclusters embedded in SiO2 prepared by magnetron sputtering[J]. journal of applied physics,2006,99(9):art.no.094302.
APA	Jiang DS.(2006).Interface effect on emission properties of Er-doped Si nanoclusters embedded in SiO2 prepared by magnetron sputtering.journal of applied physics,99(9),art.no.094302.
MLA	Jiang DS."Interface effect on emission properties of Er-doped Si nanoclusters embedded in SiO2 prepared by magnetron sputtering".journal of applied physics 99.9(2006):art.no.094302.