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浏览/检索结果: 共3条，第1-3条 帮助 限定条件 学科主题：半导体材料     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Growth and fabrication of AlGaN/GaN HEMT based on Si(111) substrates by MOCVD 期刊论文 microelectronics journal, 2008, 卷号: 39, 期号: 9, 页码: 1108-1111 Luo, WJ; Wang, XL; Xiao, HL; Wang, CM; Ran, JX; Guo, LC; Li, JP; Liu, HX; Chen, YL; Yang, FH; Li, JM 收藏  |  浏览/下载：44/0  |  提交时间：2010/03/08 AlGaN/GaN  high electron mobility transistor (HEMT)  Si (111)   Improved performance in organic light emitting diodes with a mixed electron donor-acceptor film involved in hole injection 期刊论文 journal of applied physics, 2007, 卷号: 101, 期号: 12, 页码: art.no.124507 Cao GH (Cao Guohua); Qin DS (Qin Dashan); Cao JS (Cao Junsong); Guan M (Guan Min); Zeng YP (Zeng Yiping); Li JM (Li Jinmin) 收藏  |  浏览/下载：47/0  |  提交时间：2010/03/29 FIELD-EFFECT TRANSISTORS   Influence of AlN interfacial layer on electrical properties of high-Al-content Al0.45Ga0.55N/GaN HEMT structure 期刊论文 applied surface science, 2006, 卷号: 253, 期号: 2, 页码: 762-765 Wang CM (Wang Cuimei); Wang XL (Wang Xiaoliang); Hu GX (Hu Guoxin); Wang JX (Wang Junxi); Li HP (Li Jianping); Wang ZG (Wang Zhanguo) 收藏  |  浏览/下载：31/0  |  提交时间：2010/04/11 AlGaN/AlN/GaN  two-dimensional electron gas  MOCVD  ALGAN/GAN HETEROSTRUCTURES  POLARIZATION  TRANSISTORS  GANHEMTS  GAS