Growth and fabrication of AlGaN/GaN HEMT based on Si(111) substrates by MOCVD

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	Growth and fabrication of AlGaN/GaN HEMT based on Si(111) substrates by MOCVD
	Luo, WJ ; Wang, XL ; Xiao, HL ; Wang, CM ; Ran, JX ; Guo, LC ; Li, JP ; Liu, HX ; Chen, YL ; Yang, FH ; Li, JM
刊名	microelectronics journal
	2008
卷号	39 期号:9 页码:1108-1111
关键词	AlGaN/GaN high electron mobility transistor (HEMT) Si (111)
ISSN号	0026-2692
通讯作者	luo, wj, chinese acad sci, inst semicond, key lab semicond mat sci, beijing 100083, peoples r china. 电子邮箱地址: yuntianbb@hotmail.com
中文摘要	algan/gan high electron mobility transistor (hemt) hetero-structures were grown on the 2-in si (1 1 1) substrate using metal-organic chemical vapor deposition (mocvd). low-temperature (lt) aln layers were inserted to relieve the tension stress during the growth of gan epilayers. the grown algan/gan hemt samples exhibited a maximum crack-free area of 8 mm x 5 mm, xrd gan (0 0 0 2) full-width at half-maximum (fwhm) of 661 arcsec and surface roughness of 0.377 nm. the device with a gate length of 1.4 mu m and a gate width of 60 mu m demonstrated maximum drain current density of 304 ma/mm, transconductance of 124 ms/mm and reverse gate leakage current of 0.76 mu a/mm at the gate voltage of -10 v. (c) 2008 published by elsevier ltd.
学科主题	半导体材料
收录类别	SCI
资助信息	chinese academy of sciences kgcx2-sw-107-1 national natural science foundation of china 60606002 special funds for major state basic research projects 2002cb311903 2006cb604905 513270605this work has been supported by the key innovation program of the chinese academy of sciences (no. kgcx2-sw-107-1), national natural science foundation of china (no. 60606002) and special funds for major state basic research projects (nos. 2002cb311903, 2006cb604905 and 513270605).
语种	英语
公开日期	2010-03-08
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/6466]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Luo, WJ,Wang, XL,Xiao, HL,et al. Growth and fabrication of AlGaN/GaN HEMT based on Si(111) substrates by MOCVD[J]. microelectronics journal,2008,39(9):1108-1111.
APA	Luo, WJ.,Wang, XL.,Xiao, HL.,Wang, CM.,Ran, JX.,...&Li, JM.(2008).Growth and fabrication of AlGaN/GaN HEMT based on Si(111) substrates by MOCVD.microelectronics journal,39(9),1108-1111.
MLA	Luo, WJ,et al."Growth and fabrication of AlGaN/GaN HEMT based on Si(111) substrates by MOCVD".microelectronics journal 39.9(2008):1108-1111.