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科研机构
半导体研究所 [17]
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期刊论文 [14]
会议论文 [3]
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2006 [2]
2005 [1]
2004 [2]
2003 [4]
2002 [6]
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半导体材料 [17]
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Electrical properties of undoped In0.53Ga0.47As grown on InP substrates by molecular beam epitaxy
期刊论文
journal of crystal growth, 2006, 卷号: 293, 期号: 2, 页码: 291-293
Cui LJ (Cui L. J.)
;
Zeng YP (Zeng Y. P.)
;
Wang BQ (Wang B. Q.)
;
Zhu ZP (Zhu Z. P.)
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  |  
浏览/下载:20/0
  |  
提交时间:2010/04/11
characterization
point defects
molecular beam epitaxy
semiconducting gallium compounds
semiconducting indium compounds
semiconducting ternary compounds
1.55 MU-M
QUANTUM-WELLS
TEMPERATURE
GAAS
Electron irradiation-induced defects in InP pre-annealed at high temperature
期刊论文
materials science in semiconductor processing, 2006, 卷号: 9, 期号: 1-3, 页码: 380-383
Zhao YW (Zhao Y. W.)
;
Dong ZY (Dong Z. Y.)
;
Deng AH (Deng A. H.)
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  |  
浏览/下载:44/0
  |  
提交时间:2010/04/11
indium phosphide
defect
irradiation
THERMALLY STIMULATED CURRENT
UNDOPED SEMIINSULATING INP
DEEP-LEVEL DEFECTS
FRENKEL PAIRS
FE
SPECTROSCOPY
PHOSPHIDE
AMBIENT
TRAPS
Photoluminescence characteristics of InP annealed in phosphorus and iron phosphide ambiences
期刊论文
materials science in semiconductor processing, 2005, 卷号: 8, 期号: 4, 页码: 531-535
Zhao, YW
;
Dong, HW
;
Li, JM
;
Ling, LY
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  |  
浏览/下载:40/11
  |  
提交时间:2010/03/17
indium phosphide
Study on the perfection of in situ P-injection synthesis LEC-InP single crystals
期刊论文
journal of crystal growth, 2004, 卷号: 264, 期号: 1-3, 页码: 17-20
作者:
Zhou XL
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  |  
浏览/下载:442/157
  |  
提交时间:2010/03/09
etch-pit density
Non-stoichiometry Related Deep Level Defects in Semi-insulating InP
期刊论文
人工晶体学报, 2004, 卷号: 33, 期号: 4, 页码: 535-538
Zhao Youwen
;
Dong Zhiyuan
;
Duan Manlong
;
Sun Wenrong
;
Yang Zixiang
;
Lu Xuru
;
Wang Yingli
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  |  
浏览/下载:16/0
  |  
提交时间:2010/11/23
Annealing and activation of silicon implanted in semi-insulating InP substrates
期刊论文
materials science in semiconductor processing, 2003, 卷号: 6, 期号: 4, 页码: 215-218
Dong HW
;
Zhao YW
;
Li JM
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  |  
浏览/下载:50/0
  |  
提交时间:2010/08/12
semi-insulating InP
ion implantation
silicon
annealing
activation
SI+-IMPLANTATION
PHOSPHIDE VAPOR
UNDOPED INP
FE
WAFERS
UNIFORMITY
PRESSURE
Influence of semi-insulating InP substrates on InAlAs epilayers grown by molecular beam epitaxy
期刊论文
journal of crystal growth, 2003, 卷号: 250, 期号: 3-4, 页码: 364-369
Dong HW
;
Zhao YW
;
Zeng YP
;
Jiao JH
;
Li JM
;
Lin LY
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  |  
浏览/下载:46/0
  |  
提交时间:2010/08/12
diffusion
interfaces
substrates
molecular beam epitaxy
phosphides
semiconducting indium phosphide
UNDOPED SEMIINSULATING INP
CHEMICAL-VAPOR-DEPOSITION
PHOSPHIDE VAPOR
FE
INTERFACE
PHOTOLUMINESCENCE
WAFER
UNIFORMITY
DIFFUSION
PRESSURE
Microdefects and electrical uniformity of InP annealed in phosphorus and iron phosphide ambiances
期刊论文
journal of crystal growth, 2003, 卷号: 259, 期号: 1-2, 页码: 1-7
Dong ZY
;
Zhao YW
;
Zeng YP
;
Duan ML
;
Sun WR
;
Jiao JH
;
Lin LY
收藏
  |  
浏览/下载:353/16
  |  
提交时间:2010/08/12
annealing
defects
etching
semiconducting indium phosphide
FE-DOPED INP
SEMIINSULATING INP
INDIUM-PHOSPHIDE
DEFECTS
DIFFUSION
CRYSTALS
WAFERS
Undoped semi-insulating indium phosphide (InP) and its applications
期刊论文
chinese science bulletin, 2003, 卷号: 48, 期号: 4, 页码: 313-314
Dong HW
;
Zhao YW
;
Jiao JH
;
Zeng YP
;
Li JM
;
Lin LY
收藏
  |  
浏览/下载:54/0
  |  
提交时间:2010/08/12
SEMIINSULATING INP
WAFER
FE
PHOTOLUMINESCENCE
UNIFORMITY
VAPOR
Characterization of defects and whole wafer uniformity of annealed undoped semi-insulating InP wafers
会议论文
9th international conference on defects: recognition, imaging and physics in semiconductors (drip ix), rimini, italy, sep 24-28, 2001
Zhao YW
;
Sun NF
;
Dong HW
;
Jiao JH
;
Zhao JQ
;
Sun TN
;
Lin LY
收藏
  |  
浏览/下载:14/0
  |  
提交时间:2010/11/15
indium phosphide
semi-insulating
annealing
PICTS
photoluminescence
SEMIINSULATING INP
INDIUM-PHOSPHIDE
FE
PHOTOLUMINESCENCE
TEMPERATURE
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