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	Study on the perfection of in situ P-injection synthesis LEC-InP single crystals
	Zhou XL
刊名	journal of crystal growth
	2004
卷号	264期号:1-3页码:17-20
关键词	etch-pit density
ISSN号	0022-0248
通讯作者	zhou, xl, hebei semicond res inst, pob 17940,shijiazhuang, hebei 050051, peoples r china. 电子邮箱地址: tnsun@heinfo.net
中文摘要	undoped, s-doped and fe-doped inp crystals with diameter up to 4-inch have been pulled in drop 10 0 drop -direction under p-rich condition by a rapid p-injection in situ synthesis liquid encapsulated czochralski (lec) method. high speed photoluminescence mapping, etch-pit density (epd) mapping and scanning electron microscopy have been used to characterize the samples of the single crystal ingots. dislocations and electrical homogeneity of these samples are investigated and compared. by controlling the thermal field and the solid-liquid interface shape, 4-inch low-epd inp single crystals have been successfully grown by the rapid p-injection synthesis lec method. the epd across the wafer of the ingots is less than 5 x 10(4) cm(-2). cluster defects with a pore center are observed in the p-rich lec grown inp ingots. these defects are distributed irregularly on a wafer and are surrounded by a high concentration of dislocations. the uniformity of the pl intensity across the wafer is influenced by these defects. (c) 2004 elsevier b.v. all rights reserved.
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2010-03-09
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/8134]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Zhou XL. Study on the perfection of in situ P-injection synthesis LEC-InP single crystals[J]. journal of crystal growth,2004,264(1-3):17-20.
APA	Zhou XL.(2004).Study on the perfection of in situ P-injection synthesis LEC-InP single crystals.journal of crystal growth,264(1-3),17-20.
MLA	Zhou XL."Study on the perfection of in situ P-injection synthesis LEC-InP single crystals".journal of crystal growth 264.1-3(2004):17-20.

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