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浏览/检索结果: 共5条，第1-5条 帮助 限定条件 学科主题：半导体材料    内容类型：会议论文     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Heteroepitaxial Growth of 3C-SiC on Si (111) Substrate using AlN as a Buffer Layer 会议论文 international conference on silicon carbide and related materials, otsu, japan, oct 14-19, 2007 Zhao, YM; Sun, GS; Liu, XF; Li, JY; Zhao, WS; Wang, L; Li, JM; Zeng, YP 收藏  |  浏览/下载：55/0  |  提交时间：2010/03/09 Silicon Carbide  Aluminum Nitride  buffer layer  LPCVD   Homoepitaxial growth and characterization of 4H-SiC epilayers by low-pressure hot-wall chemical vapor deposition 会议论文 international conference on silicon carbide and related materials (icscrm 2005), pittsburgh, pa, sep 18-23, 2005 Sun, GS (Sun, Guosheng); Ning, J (Ning, Jin); Gong, QC (Gong, Quancheng); Gao, X (Gao, Xin); Wang, L (Wang, Lei); Liu, XF (Liu, Xingfang); Zeng, YP (Zeng, Yiping); Li, JM (Li, Jinmin) 收藏  |  浏览/下载：101/29  |  提交时间：2010/03/29 homoepitaxial growth  low-pressure hot-wall CVD  structural and optical characteristics  intentional doping  Schottky barrier diodes   Growth and characterization of semi-insulating GaN films grown by MOCVD 会议论文 3rd asian conference on crystal growth and crystal technology (cgct-3), beijing, peoples r china, oct 16-19, 2005 Fang, CB; Wang, XL; Hu, GX; Wang, JX; Wang, CM; Li, JM 收藏  |  浏览/下载：203/36  |  提交时间：2010/03/29 MOCVD   Microstructural and compositional characteristics of GaN films grown on a ZnO-buffered Si(111) wafer 会议论文 international wuhan symposium on advanced electron microscopy (iwsaem), wuhan, peoples r china, oct 17-21, 2003 Luo XH; Wang RM; Zhang XP; Zhang HZ; Yu DP; Luo MC 收藏  |  浏览/下载：18/1  |  提交时间：2010/10/29 transmission electron microscopy  electron energy loss spectroscopy  molecular beam epitaxy  gallium nitride  CHEMICAL-VAPOR-DEPOSITION  EPITAXY  LAYER   High power 980 nm Al-free strained quantum-well lasers for erbium-doped fiber amplifiers 会议论文 international-union-of-materials-research-societies international conference on advanced materials (iumrs-icam 99), beijing, peoples r china, jun 13-18, 1999 Chen LH; Xu ZT; Ma XY; Zhang JM; Yang GW; Xu JY 收藏  |  浏览/下载：11/0  |  提交时间：2010/11/15 high power  Al-free laser  communication  EPITAXY