Growth and characterization of semi-insulating GaN films grown by MOCVD | |
Fang, CB ; Wang, XL ; Hu, GX ; Wang, JX ; Wang, CM ; Li, JM | |
2006 | |
会议名称 | 3rd asian conference on crystal growth and crystal technology (cgct-3) |
会议日期 | oct 16-19, 2005 |
会议地点 | beijing, peoples r china |
关键词 | MOCVD |
页码 | 24: 14-18 sp. iss. si |
通讯作者 | wang, xl, chinese acad sci, inst semicond, beijing 100083, peoples r china. 电子邮箱地址: xlwang@red.semi.ac.cn |
中文摘要 | high resistivity unintentionally doped gan films were grown on (0001) sapphire substrates by metalorganic chemical vapor deposition. the surface morphology of the layer was measured by both atomic force microscopy and scanning electron microscopy. the results show that the films have mirror-like surface morphology with root mean square of 0.3 nm. the full width at half maximum of double crystal x-ray diffraction rocking curve for (0002) gan is about 5.22 arc-min, indicative of high crystal quality. the resistivity of the gan epilayers at room temperature and at 250 degrees c was measured to be approximate 10(9) and 10(6) omega(.)cm respectively, by variable temperature hall measurement. deep level traps in the gan epilayers were investigated by thermally stimulated current and resistivity measurements. |
英文摘要 | high resistivity unintentionally doped gan films were grown on (0001) sapphire substrates by metalorganic chemical vapor deposition. the surface morphology of the layer was measured by both atomic force microscopy and scanning electron microscopy. the results show that the films have mirror-like surface morphology with root mean square of 0.3 nm. the full width at half maximum of double crystal x-ray diffraction rocking curve for (0002) gan is about 5.22 arc-min, indicative of high crystal quality. the resistivity of the gan epilayers at room temperature and at 250 degrees c was measured to be approximate 10(9) and 10(6) omega(.)cm respectively, by variable temperature hall measurement. deep level traps in the gan epilayers were investigated by thermally stimulated current and resistivity measurements.; zhangdi于2010-03-29批量导入; zhangdi于2010-03-29批量导入; chinese assoc crystal growth.; crystal mat shandong univ, state key lab.; cas, tech inst phys & chem.; res inst synthet crystal.; japanese soc promot sci, 161 comm.; chinese acad sci, inst semicond, beijing 100083, peoples r china |
收录类别 | 其他 |
会议主办者 | chinese assoc crystal growth.; crystal mat shandong univ, state key lab.; cas, tech inst phys & chem.; res inst synthet crystal.; japanese soc promot sci, 161 comm. |
会议录 | journal of rare earths |
会议录出版者 | metallurgical industry press ; 2 xinjiekouwai dajie, beijing 100088, peoples r china |
会议录出版地 | 2 xinjiekouwai dajie, beijing 100088, peoples r china |
学科主题 | 半导体材料 |
语种 | 英语 |
ISSN号 | 1002-0721 |
内容类型 | 会议论文 |
源URL | [http://ir.semi.ac.cn/handle/172111/10030] |
专题 | 半导体研究所_中国科学院半导体研究所(2009年前) |
推荐引用方式 GB/T 7714 | Fang, CB,Wang, XL,Hu, GX,et al. Growth and characterization of semi-insulating GaN films grown by MOCVD[C]. 见:3rd asian conference on crystal growth and crystal technology (cgct-3). beijing, peoples r china. oct 16-19, 2005. |
个性服务 |
查看访问统计 |
相关权益政策 |
暂无数据 |
收藏/分享 |
除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。
修改评论