High power 980 nm Al-free strained quantum-well lasers for erbium-doped fiber amplifiers

CORC > 半导体研究所 > 中国科学院半导体研究所 > 中国科学院半导体研究所（2009年前）

	High power 980 nm Al-free strained quantum-well lasers for erbium-doped fiber amplifiers
	Chen LH ; Xu ZT ; Ma XY ; Zhang JM ; Yang GW ; Xu JY
	2000
会议名称	international-union-of-materials-research-societies international conference on advanced materials (iumrs-icam 99)
会议日期	jun 13-18, 1999
会议地点	beijing, peoples r china
关键词	high power Al-free laser communication EPITAXY
页码	201-204
通讯作者	chen lh chinese acad sci inst semicond pob 912 beijing 100083 peoples r china.
中文摘要	in this paper, we reported on the fabrication of 980 nm ingaas/ingaasp strained quantum-well (qw) lasers with broad waveguide. the laser structure was grown by low-pressure metalorganic chemical vapor deposition on a n(+)- gaas substrate. for 3 mu m stripe ridge waveguide lasers, the threshold current is 30 ma and the maximum output power and the output power operating in fundamental mode are 350 mw and 200 mw, respectively. the output power from the single mode fiber is up to 100 mw, the coupling efficiency is 50%. we also fabricated 100 mu m broad stripe coated lasers with cavity length of 800 mu m, a threshold current density of 170 a/cm(2), a high slope efficiency of 1.03 w/a and a far-field pattern of 40 x 6 degrees are obtained. the maximum output power of 3.5 w is also obtained for 100 mu m wide coated lasers. (c) 2000 elsevier science b.v. all rights reserved.
英文摘要	in this paper, we reported on the fabrication of 980 nm ingaas/ingaasp strained quantum-well (qw) lasers with broad waveguide. the laser structure was grown by low-pressure metalorganic chemical vapor deposition on a n(+)- gaas substrate. for 3 mu m stripe ridge waveguide lasers, the threshold current is 30 ma and the maximum output power and the output power operating in fundamental mode are 350 mw and 200 mw, respectively. the output power from the single mode fiber is up to 100 mw, the coupling efficiency is 50%. we also fabricated 100 mu m broad stripe coated lasers with cavity length of 800 mu m, a threshold current density of 170 a/cm(2), a high slope efficiency of 1.03 w/a and a far-field pattern of 40 x 6 degrees are obtained. the maximum output power of 3.5 w is also obtained for 100 mu m wide coated lasers. (c) 2000 elsevier science b.v. all rights reserved.; 于2010-11-15批量导入; zhangdi于2010-11-15 17:02:24导入数据到semi-ir的ir; made available in dspace on 2010-11-15t09:02:24z (gmt). no. of bitstreams: 1 2954.pdf: 277527 bytes, checksum: 618046ec74b74f25ef21ef21c4f192db (md5) previous issue date: 2000; int union mat res soc.; chinese acad sci, inst semicond, beijing 100083, peoples r china
收录类别	CPCI-S
会议主办者	int union mat res soc.
会议录	optical materials, 14 (3)
会议录出版者	elsevier science bv ; po box 211, 1000 ae amsterdam, netherlands
会议录出版地	po box 211, 1000 ae amsterdam, netherlands
学科主题	半导体材料
语种	英语
ISSN号	0925-3467
内容类型	会议论文
源URL	[http://ir.semi.ac.cn/handle/172111/14987]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Chen LH,Xu ZT,Ma XY,et al. High power 980 nm Al-free strained quantum-well lasers for erbium-doped fiber amplifiers[C]. 见:international-union-of-materials-research-societies international conference on advanced materials (iumrs-icam 99). beijing, peoples r china. jun 13-18, 1999.