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浏览/检索结果: 共20条，第1-10条 帮助 限定条件 发表日期：2011    学科主题：半导体材料     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Extraction of AlGaN/GaN heterostructure Schottky diode barrier heights from forward current-voltage characteristics 期刊论文 journal of applied physics, 2011, 卷号: 109, 期号: 7, 页码: article no.74512 Lv YJ; Lin ZJ; Corrigan TD; Zhao JZ; Cao ZF; Meng LG; Luan CB; Wang ZG; Chen H 收藏  |  浏览/下载：65/6  |  提交时间：2011/07/05 FIELD-EFFECT TRANSISTORS  GAN  DEPENDENCE  CONTACTS  STATES  NI   Room-temperature spin photocurrent spectra at interband excitation and comparison with reflectance-difference spectroscopy in InGaAs/AlGaAs quantum wells 期刊论文 journal of applied physics, 2011, 卷号: 109, 期号: 5, 页码: article no.53519 Yu JL; Chen YH; Jiang CY; Liu Y; Ma H 收藏  |  浏览/下载：36/4  |  提交时间：2011/07/05 MOLECULAR-BEAM EPITAXY  INVERSION ASYMMETRY  HETEROSTRUCTURES  SEGREGATION  INTERFACE   Valence band offset of GaN/diamond heterojunction measured by X-ray photoelectron spectroscopy 期刊论文 applied surface science, 2011, 卷号: 257, 期号: 18, 页码: 8110-8112 作者:  Shi K;  Jiao CM;  Song HP 收藏  |  浏览/下载：94/7  |  提交时间：2011/07/05 Valence band offset  GaN/diamond heterojunction  XPS  Conduction band offset  CHEMICAL-VAPOR-DEPOSITION  ALGAN/GAN HEMTS  DIAMOND  GAN  FILMS   Influence of thermal stress on the characteristic parameters of AlGaN/GaN heterostructure Schottky contacts 期刊论文 chinese physics b, 2011, 卷号: 20, 期号: 4, 页码: article no.47105 Lu YJ; Lin ZJ; Zhang Y; Meng LG; Cao ZF; Luan CB; Chen H; Wang ZG 收藏  |  浏览/下载：58/2  |  提交时间：2011/07/05 AlGaN/GaN heterostructures  thermal stressing  polarization  self-consistently solving Schrodinger's and Poisson's equations  FIELD-EFFECT TRANSISTORS  POLARIZATION  STABILITY  CHARGE  GAN   Polarization Coulomb field scattering in AlGaN/AlN/GaN heterostructure field-effect transistors 期刊论文 applied physics letters, 2011, 卷号: 98, 期号: 12, 页码: article no.123512 Lv YJ; Lin ZJ; Zhang Y; Meng LG; Luan CB; Cao ZF; Chen H; Wang ZG 收藏  |  浏览/下载：67/9  |  提交时间：2011/07/05 2-DIMENSIONAL ELECTRON-GAS  INTERFACIAL LAYER  MOBILITY   Optimized growth of p-type AlGaN electron blocking layer in the GaN-based LED 期刊论文 acta physica sinica, 2011, 卷号: 60, 期号: 1, 页码: article no.16108 Wang B; Li ZC; Yao R; Liang M; Yan FW; Wang GH 收藏  |  浏览/下载：93/5  |  提交时间：2011/07/05 GaN-based  LED  Al composition  electron blocking layer  TEMPERATURE  ALLOYS  MOVPE   Improvement of efficiency of GaN-based polarization-doped light-emitting diodes grown by metalorganic chemical vapor deposition 期刊论文 applied physics letters, 2011, 卷号: 98, 期号: 24, 页码: 241111 Zhang, L; Wei, XC; Liu, NX; Lu, HX; Zeng, JP; Wang, JX; Zeng, YP; Li, JM 收藏  |  浏览/下载：25/0  |  提交时间：2012/02/06 ALGAN/GAN HETEROSTRUCTURES  TRANSPORT-PROPERTIES   The influence of the1st AlN and the2nd GaN layers on properties of AlGaN/2nd AlN/2nd GaN/1st AlN/1st GaN structure 期刊论文 applied physics a: materials science and processing, 2011, 卷号: 104, 期号: 4, 页码: 1211-1216 Bi, Yang; Wang, XiaoLiang; Yang, CuiBai; Xiao, HongLing; Wang, CuiMei; Peng, EnChao; Lin, DeFeng; Feng, Chun; Jiang, LiJuan, 收藏  |  浏览/下载：16/0  |  提交时间：2012/06/14 Poisson equation   Growth of 2 mu m Crack-Free GaN on Si(111) Substrates by Metal Organic Chemical Vapor Deposition 期刊论文 chinese physics letters, 2011, 卷号: 28, 期号: 4, 页码: article no.48102 作者:  Pan X;  Hou QF 收藏  |  浏览/下载：85/7  |  提交时间：2011/07/05 ELECTRON-MOBILITY TRANSISTORS  AL-CONTENT  STRESS-CONTROL  PHASE EPITAXY  ALGAN  BUFFER  LAYERS  HETEROSTRUCTURES  INTERLAYERS  SILICON   Effect of high temperature AlGaN buffer thickness on GaN Epilayer grown on Si(111) substrates 期刊论文 journal of materials science-materials in electronics, 2011, 卷号: 22, 期号: 8, 页码: 1028-1032 作者:  Pan X 收藏  |  浏览/下载：20/0  |  提交时间：2011/09/14 CHEMICAL-VAPOR-DEPOSITION  PHASE EPITAXY  ALN INTERLAYERS  FILMS  STRESS  LAYERS  DISLOCATIONS  REDUCTION  DENSITY  DIODES