Improvement of efficiency of GaN-based polarization-doped light-emitting diodes grown by metalorganic chemical vapor deposition

	Improvement of efficiency of GaN-based polarization-doped light-emitting diodes grown by metalorganic chemical vapor deposition
	Zhang, L ; Wei, XC ; Liu, NX ; Lu, HX ; Zeng, JP ; Wang, JX ; Zeng, YP ; Li, JM
刊名	applied physics letters
	2011
卷号	98 期号:24 页码:241111
关键词	ALGAN/GAN HETEROSTRUCTURES TRANSPORT-PROPERTIES
ISSN号	0003-6951
通讯作者	zhang, l (reprint author), chinese acad sci, inst semicond, res & dev ctr semicond lighting, pob 912, beijing 100083, peoples r china，zhanglian07@semi.ac.cn
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2012-02-06
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/22815]
专题	半导体研究所_中科院半导体照明研发中心
推荐引用方式 GB/T 7714	Zhang, L,Wei, XC,Liu, NX,et al. Improvement of efficiency of GaN-based polarization-doped light-emitting diodes grown by metalorganic chemical vapor deposition[J]. applied physics letters,2011,98(24):241111.
APA	Zhang, L.,Wei, XC.,Liu, NX.,Lu, HX.,Zeng, JP.,...&Li, JM.(2011).Improvement of efficiency of GaN-based polarization-doped light-emitting diodes grown by metalorganic chemical vapor deposition.applied physics letters,98(24),241111.
MLA	Zhang, L,et al."Improvement of efficiency of GaN-based polarization-doped light-emitting diodes grown by metalorganic chemical vapor deposition".applied physics letters 98.24(2011):241111.