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Single event transient effect of frontside and backside illumination image sensors under proton irradiation
期刊论文
ACTA PHYSICA SINICA, 2022, 卷号: 71, 期号: 5, 页码: 1-9
作者:
Fu, J (Fu Jing) [1] , [2] , [3]
;
Cai, YL (Cai Yu-Long) [4]
;
Li, YD (Li Yu-Dong) [1] , [2]
;
Feng, J (Feng Jie) [1] , [2]
;
Wen, L (Wen Lin) [1] , [2]
收藏
  |  
浏览/下载:20/0
  |  
提交时间:2022/06/06
CMOS image sensor
proton irradiation
single event effect
transientbrightspot
Analysis of Dark Signal Degradation Caused by 1 MeV Neutron Irradiation on Backside-Illuminated CMOS Image Sensors
期刊论文
CHINESE JOURNAL OF ELECTRONICS, 2021, 卷号: 30, 期号: 1, 页码: 180-184
作者:
Liu, BK (Liu Bingkai)[ 1,2,3 ]
;
Li, YD (Li Yudong)[ 1,2 ]
;
Wen, L (Wen Lin)[ 1,2 ]
;
Zhou, D (Zhou Dong)[ 1,2 ]
;
Feng, J (Feng Jie)[ 1,2 ]
收藏
  |  
浏览/下载:31/0
  |  
提交时间:2021/05/10
Backside‐
illuminated CMOS image sensors
Dark signal behaviors
Displacement damage effects
Neutron irradiation
Mechanism of Ionization Damage in Large Eight-Transistor Complementary Metal-Oxide-Semiconductor Color Image Sensors
期刊论文
JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS, 2021, 卷号: 16, 期号: 11, 页码: 1755-1761
作者:
Feng, J (Feng, Jie) [1] , [2]
;
Fu, J (Fu, Jing) [1] , [2] , [3]
;
Li, YD (Li, Yu-Dong) [1] , [2]
;
Wen, L (Wen, Lin) [1] , [2]
;
Guo, Q (Guo, Qi) [1] , [2]
收藏
  |  
浏览/下载:22/0
  |  
提交时间:2022/03/24
CMOS Color Image Sensor
Ionization Damage
Radiation-Sensitive Parameters
Influence of enhanced low dose rate sensitivity on single-event transient degradation in the LM158 bipolar operational amplifier
期刊论文
AIP ADVANCES, 2021, 卷号: 11, 期号: 5, 页码: 1-6
作者:
Xiang, CAF (Xiang, Chuanfeng) 1 , 2
;
Yao, S (Yao, Shuai) 1 , 3
;
Lu, W (Lu, Wu) 1 , 2
;
Li, XL (Li, Xiaolong) 1
;
Yu, X (Yu, Xin) 1
收藏
  |  
浏览/下载:34/0
  |  
提交时间:2021/08/06
Radiation Effects and Mechanisms on Switching Characteristics of Silicon Carbide Power MOSFETs
期刊论文
JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS, 2021, 卷号: 16, 期号: 9, 页码: 1423-1429
作者:
Feng, HN (Feng, Haonan) [1] , [2] , [3]
;
Yang, S (Yang, Sheng) [1] , [2] , [3]
;
Liang, XW (Liang, Xiaowen) [1] , [2] , [3]
;
Zhang, D (Zhang, Dan) [1] , [2] , [3]
;
Pu, XJ (Pu, Xiaojuan) [1] , [2] , [3]
收藏
  |  
浏览/下载:40/0
  |  
提交时间:2022/03/24
SiC Power MOSFETs
Switching Characteristics
Total Ionizing Dose (TID) Effect
Static Characteristic
Parasitic Capacitance
Prediction of drug-target interactions from multi-molecular network based on LINE network representation method
期刊论文
JOURNAL OF TRANSLATIONAL MEDICINE, 2020, 卷号: 18, 期号: 1, 页码: 1-11
作者:
Ji, BY (Ji, Bo-Ya)[ 1,2 ]
;
You, ZH (You, Zhu-Hong)[ 1,2 ]
;
Jiang, HJ (Jiang, Han-Jing)[ 1,2 ]
;
Guo, ZH (Guo, Zhen-Hao)[ 1,2 ]
;
Zheng, K (Zheng, Kai)[ 3 ]
收藏
  |  
浏览/下载:22/0
  |  
提交时间:2020/10/23
Drug-target interactions
Heterogeneous information network
LINE
Random forest
A study of hot pixels induced by proton and neutron irradiations in charge coupled devices
期刊论文
RADIATION EFFECTS AND DEFECTS IN SOLIDS, 2020, 卷号: 175, 期号: 5-6, 页码: 540-550
作者:
Liu, BK (Liu, Bingkai)[ 1,2,3 ]
;
Li, YD (Li, Yudong)[ 1,2 ]
;
Wen, L (Wen, Lin)[ 1,2 ]
;
Zhou, D (Zhou, Dong)[ 1,2 ]
;
Feng, J (Feng, Jie)[ 1,2 ]
收藏
  |  
浏览/下载:42/0
  |  
提交时间:2020/07/06
Charge coupled devices (CCDs)
proton irradiation
neutron irradiation
hot pixels
displacement damage effects
Single-Event Effects in Pinned Photodiode CMOS Image Sensors: SET and SEL
期刊论文
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2020, 卷号: 67, 期号: 8, 页码: 1861-1868
作者:
Cai, YL (Cai, Yulong)[ 1,2 ]
;
Wen, L (Wen, Lin)[ 3 ]
;
Li, YD (Li, Yudong)[ 3 ]
;
Guo, Q (Guo, Qi)[ 3 ]
;
Zhou, D (Zhou, Dong)[ 3 ]
收藏
  |  
浏览/下载:24/0
  |  
提交时间:2020/09/09
Complementary metal-oxide-semiconductor
(CMOS) image sensors (CIS)
heavy ions
pulsed laser
single-event latchup (SEL)
single-event transient (SET)
1 meV electron irradiation and post-annealing effects of GaInAsN diluted nitride alloy with 1 eV bandgap energy
期刊论文
THIN SOLID FILMS, 2020, 卷号: 709, 期号: 9, 页码: 1-5
作者:
Sailai, M (Sailai, Momin)[ 1 ]
;
Lei, QQ (Lei, Qi Qi)[ 1,2 ]
;
Aierken, A (Aierken, Abuduwayiti)[ 1,3 ]
;
Heini, M (Heini, Maliya)[ 1,4 ]
;
Zhao, XF (Zhao, Xiao Fan)[ 1 ]
收藏
  |  
浏览/下载:27/0
  |  
提交时间:2020/10/23
Gallium indium arsenide nitride alloy
Electron irradiation
Photoluminescence
Thermal annealing
Arrhenius plot
Displacement damage effects induced by fast neutron in backside-illuminated CMOS image sensors
期刊论文
JOURNAL OF NUCLEAR SCIENCE AND TECHNOLOGY, 2020, 卷号: 57, 期号: 9, 页码: 1015-1021
作者:
Zhang, X (Zhang, Xiang)[ 1,2,3 ]
;
Li, YD (Li, Yudong)[ 1,2 ]
;
Wen, L (Wen, Lin)[ 1,2 ]
;
Feng, J (Feng, Jie)[ 1,2 ]
;
Zhou, D (Zhou, Dong)[ 1,2 ]
收藏
  |  
浏览/下载:21/0
  |  
提交时间:2020/12/09
14-MeV neutron
neutron irradiation
radiation damage
radiation effect
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