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浏览/检索结果: 共6条，第1-6条 帮助 限定条件 发表日期：2020     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择发表日期升序发表日期降序提交时间升序提交时间降序题名升序题名降序作者升序作者降序 Transverse-pressure susceptibility of high-J(c) RRP and PIT types of Nb3Sn Rutherford cables for accelerator magnets 期刊论文 SUPERCONDUCTOR SCIENCE & TECHNOLOGY, 2020, 卷号: 33 作者:  Gao, P.;  Dhalle, M.;  Bordini, B.;  Ballarino, A.;  Ten Kate, H. H. J. 收藏  |  浏览/下载：29/0  |  提交时间：2020/12/28 RRP and PIT Nb3Sn wire  Rutherford cable  transverse pressure  critical current degradation   Magnetic properties of La0.7Sr0.3MnO3 under the pressure and the transport property under the magnetic field 期刊论文 JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 2020 作者:  Zhang, Xian;  Han, YuYan;  Kan, Xucai;  Wang, Min;  Rao, Rui 收藏  |  浏览/下载：20/0  |  提交时间：2020/11/30 double exchange  Jahn-Teller distortion  La0.7Sr0.3MnO3  magnetic properties  pressure   Assessing the Effect of the Electron-Beam Irradiation on Pd/Ga(2)O(3)Catalyst under Ambient Pressure 期刊论文 CHEMCATCHEM, 2020, 页码: 6 作者:  Wang, Yongzhao;  Niu, Yiming;  Gao, Tongtong;  Liu, Siyang;  Zhang, Bingsen 收藏  |  浏览/下载：21/0  |  提交时间：2021/02/02 in-situ transmission electron microscopy  Pd  Ga2O3  electron-beam irradiation damage  ambient pressure  metal-support interaction   Development and application of ANN model for property prediction of supercritical kerosene 期刊论文 Computers and Fluids, 2020, 卷号: 209, 期号: 2020, 页码: 1-18 作者:  Li B(李波);  Lee YC(李亚超);  Yao W(姚卫);  Fan XJ(范学军) 收藏  |  浏览/下载：88/0  |  提交时间：2020/08/27 Artificial Neural Network (Ann)  Principle Of Extended Corresponding State (Ecs)  Rp-3 Kerosene  Superitical Pressure  Openfoam   Unveiling the pinning behavior of charged domain walls in BiFeO3 thin films via vacancy defects 会议论文 作者:  Geng, W.R.;  Tian, X.H.;  Jiang, Y.X.;  Zhu, Y.L.;  Tang, Y.L. 收藏  |  浏览/下载：2/0  |  提交时间：2020/12/18 Bismuth compounds  Defects  Domain walls  Electric field measurement  Electronic states  Ferroelectric materials  Film growth  High resolution transmission electron microscopy  Interface states  Iron compounds  Modulation  Oxygen  Scanning electron microscopy  Thin films  TransmissionsAberration-corrected scanning transmission electron microscopies  BiFeO3 thin film  Charged domain wall  Electronics devices  Oxygen pressure  Phase-field simulation  Theoretical simulation  Vacancy Defects   Unveiling the pinning behavior of charged domain walls in BiFeO3 thin films via vacancy defects 期刊论文 Acta Materialia, 2020, 卷号: 186, 页码: 68-76 作者:  Geng, W.R.;  Tian, X.H.;  Jiang, Y.X.;  Zhu, Y.L.;  Tang, Y.L. 收藏  |  浏览/下载：2/0  |  提交时间：2020/11/14 Bismuth compounds  Defects  Domain walls  Electric field measurement  Electronic states  Ferroelectric materials  Film growth  High resolution transmission electron microscopy  Interface states  Iron compounds  Modulation  Oxygen  Scanning electron microscopy  Thin films  Transmissions  Aberration-corrected scanning transmission electron microscopies  BiFeO3 thin film  Charged domain wall  Electronics devices  Oxygen pressure  Phase-field simulation  Theoretical simulation  Vacancy Defects