Unveiling the pinning behavior of charged domain walls in BiFeO3 thin films via vacancy defects

doi:10.1016/j.actamat.2019.12.041

CORC > 兰州理工大学 > 兰州理工大学

	Unveiling the pinning behavior of charged domain walls in BiFeO3 thin films via vacancy defects
	Geng, W.R.3,4; Tian, X.H.3,4; Jiang, Y.X.3; Zhu, Y.L.3; Tang, Y.L.3; Wang, Y.J.3; Zou, M.J.3,4; Feng, Y.P.1,3; Wu, B.3,4; Hu, W.T.3,4
	2020-03-01
关键词	Bismuth compounds Defects Domain walls Electric field measurement Electronic states Ferroelectric materials Film growth High resolution transmission electron microscopy Interface states Iron compounds Modulation Oxygen Scanning electron microscopy Thin films TransmissionsAberration-corrected scanning transmission electron microscopies BiFeO3 thin film Charged domain wall Electronics devices Oxygen pressure Phase-field simulation Theoretical simulation Vacancy Defects
卷号	186
DOI	10.1016/j.actamat.2019.12.041
页码	68-76
英文摘要	Manipulation of electronic states in functional ferroelectrics is promising for next generation electronics devices. The charged domain walls in ferroelectric materials especially facilitate the electronic state modulation and are promising for developing interface-based devices. However, the major challenges impeding the application are their intentional manipulation and the elusive pinning behavior. Here, results that charged domain walls in BiFeO3 films can be pinned and regulated by oxygen vacancy planar distributions controlled by oxygen pressure during film growth are reported. Using aberration-corrected scanning transmission electron microscopy complemented by theoretical simulations, rich pinning behavior of tail-to-tail charged domain walls by oxygen vacancy plates is revealed. At high annealing oxygen pressure, 71° charged domain walls are stabilized by narrow vacancy plates. Decreasing the oxygen pressure, the transformation from 71° to 109° charged domain walls happens by expanding the vacancy plates, as collaborated by phase field simulations. Besides, the 71°-109° charged domain wall pairs are stabilized due to further interaction between two neighboring vacancy plates. These results provide the active modulation of the electronic states and illuminate the rich pinning behavior of domain walls by vacancy defects in ferroelectrics, which in turn could provide implications for designing potential electronics devices. © 2020 Acta Materialia Inc.
会议录	Acta Materialia
会议录出版者	Acta Materialia Inc
语种	英语
ISSN号	13596454
WOS研究方向	Materials Science ; Metallurgy & Metallurgical Engineering
WOS记录号	WOS:000518698300007
内容类型	会议论文
源URL	[http://ir.lut.edu.cn/handle/2XXMBERH/132649]
专题	兰州理工大学
作者单位	1.University of Chinese Academy of Sciences, Yuquan Road 19, Beijing; 100049, China; 2.State Key Lab of Advanced Processing and Recycling on Non-ferrous Metals, Lanzhou University of Technology, Langongping Road 287, Lanzhou; 730050, China 3.Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Wenhua Road 72, Shenyang; 110016, China; 4.University of Science and Technology of China, Jinzhai Road 96, Hefei; 230026, China;
推荐引用方式 GB/T 7714	Geng, W.R.,Tian, X.H.,Jiang, Y.X.,et al. Unveiling the pinning behavior of charged domain walls in BiFeO3 thin films via vacancy defects[C]. 见:.